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Crucible for the crystallization of silicon

A silicon crystallization and crucible technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of weak silicon nitride coating, time-consuming, expensive operation, etc.

Inactive Publication Date: 2010-06-09
VESUVIUS USA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] This silicon nitride detachment coating itself can cause problems
The thickness of the silicon nitride coating required to prevent the silicon from reacting with the silica crucible is significant (approximately 300 μm), thus making this coating operation expensive and time consuming
Also, this silicon nitride coating is not strong and may flake off or flake off during use or even before use

Method used

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  • Crucible for the crystallization of silicon
  • Crucible for the crystallization of silicon
  • Crucible for the crystallization of silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will now be described by way of examples according to the present invention and comparative examples. In the table below, the adhesion of each coating was measured according to ASTM D4541 using a POSITEST PULL-OFF ADHESION TESTER testing machine (manufactured by DEFELSKO Corp.). The tester evaluates the adhesion of a coating by determining the maximum pull-off force the coating can withstand before detachment, that is, the force required to use hydraulic pressure to pull a coating of a specified test diameter from a substrate. The force is expressed in pressure (kPa).

[0024] Example of the middle layer:

[0025] Table I - Middle Layer

[0026]

[0027] **(weight%)

[0028] A preferred embodiment is an intermediate layer consisting of C and G, with G being the most preferred.

[0029] Another example of an intermediate layer

[0030] Table II - Another Intermediate Layer

[0031]

[0032] **(weight%)

[0033] The preferred composition...

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Abstract

The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings, for crucibles used in the solidification of polycrystalline silicone. The objective of the inventor was to provide a crucible which does not require the preparation of a very thick coating at the end user facilities, which is faster and cheaper to produce and which presents a stronger coating with an improved adherence to the walls. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) an intermediate layer comprising 50 to 100 wt% of silica at the surface of the side walls facing the inner volume; and c) a surface layer comprising 50 to 100wt% silicon nitride, up to 50wt% of silicon dioxide and up to 20wt% of silicon on the top of the intermediate layer.

Description

technical field [0001] The present invention relates to crucibles for silicon crystallization and to the preparation and use of release coatings for crucibles used in the treatment of molten material in which they solidify and then removed in ingot form, and more particularly Concerns the release coating of crucibles used in the solidification of polysilicon. Background technique [0002] Silica (or fused silica or quartz) crucibles are typically used for polysilicon solidification. The main reason for choosing silica is its high purity and availability. However, there are some problems with silicon oxide-based crucibles used to produce silicon. [0003] Silicon in molten state reacts with the silica crucible it comes into contact with. The molten silicon reacts with silicon oxide to form silicon monoxide and oxygen. Oxygen can contaminate silicon. Silicon monoxide is volatile and will react with graphite parts in the furnace. Silicon monoxide reacts with graphite to f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10
CPCC30B15/10Y10T117/10Y10T117/1032
Inventor G·兰库勒
Owner VESUVIUS USA CORP