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Metal oxide ceramic thin film on base metal electrode

An electrode, oxidized technology, used in fixed capacitor parts, circuits, capacitors, etc., can solve problems such as increased leakage current and capacitor damage

Active Publication Date: 2011-04-27
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In a certain operating electric field (for example, 2 volts, 0.1 micron), free charge carriers in the ceramic material generated under the reducing atmosphere can migrate to the electrodes, resulting in the formation of space charges (charge separation), accompanied by electrons from the cathode ( negative electrode) Schottky emission into the dielectric to maintain a charge-neutral state; this process leads to an irreversible increase in leakage current and destruction of the capacitor

Method used

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  • Metal oxide ceramic thin film on base metal electrode
  • Metal oxide ceramic thin film on base metal electrode
  • Metal oxide ceramic thin film on base metal electrode

Examples

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Embodiment Construction

[0013] figure 1 A cross-sectional view of an interposer substrate disposed between a die and a base substrate is shown. figure 1 An assembly 100 is shown that includes a die or chip 110 , an interposer substrate 120 and a base substrate 150 . The component may form part of an electronic system such as a computer (e.g., desktop computer, laptop computer, portable computer, server, Internet appliance, etc.), wireless communication device (e.g., cellular phone, cordless phone, pagers), computer peripherals (e.g., printers, scanners, monitors), entertainment equipment (e.g., televisions, radios, stereos, cassette players, compact disc players, VCRs, MP3 (Moving Picture Experts Group, Audio Layer 3 player)) etc.

[0014] exist figure 1 In the illustrated embodiment, die 110 is an integrated circuit die, such as a processor die. Electrical contacts (eg, contact pads) on the surface of the die 110 are connected to the interposer 120 through the conductive bump layer 130 . The ba...

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Abstract

A method including forming a capacitor structure including an electrode material and a ceramic material on the electrode material; and sintering the ceramic material under a condition where a point defect state of the ceramic material defines the ceramic material as insulating without oxidation of the electrode material. A method including depositing a ceramic material on an electrically conductive foil; and sintering the ceramic material in a reducing atmosphere at a temperature that minimizes the mobility of point defects to transition to a level corresponding to a greater conductivity of the ceramic material. An apparatus including a first electrode; a second electrode; and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material includes a thickness less than one micron and a leakage current corresponding to a thermodynamic state wherein a concentration of mobile point defects have been optimized.

Description

technical field [0001] Integrated circuit structure and packaging. technical background [0002] It is desirable to provide decoupling capacitance in close proximity to the integrated circuit chip or die. As the switching speed and current requirements of the chip or die become higher and higher, this capacitance must be increased. One way to provide decoupling capacitance in a chip or die is through an interposer substrate located between the chip and the package. Using an interposer substrate between the chip and package allows the capacitance to be close to the chip without having to use areas on the chip or the associated substrate package. This configuration can improve the capacitance on the power supply line of the chip. [0003] Regarding the interposer substrate, capacitance can be provided by using film capacitors. Typically, platinum material in the form of patterned flakes can form electrodes, and a dielectric material (eg, metal oxide material) can be formed...

Claims

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Application Information

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IPC IPC(8): H01G4/12C04B35/468
CPCH05K1/0306H05K1/162H05K2201/0355H05K2201/017H01G4/1227H01L2224/16225H01L2924/15311H01G4/00H01G4/12
Inventor 闵研基坚吉兹·A·帕兰独兹
Owner INTEL CORP