A vacuum electron beam welding method

Abstract

The invention relates to a vacuum electronic beam welding method, which comprises (1), welding preparation that cleaning target material and back plate, and moving it into vacuum room to vacuum; (2), preheating welding seam; (3), the first vacuum electronic beam welding; (4), vacuum insulating temperature of target material; (5), second vacuum electronic beam welding; (6), quenching that taking out the target material from the vacuum room, and quenching. Compared with present technique, the invention insulates temperature after the first welding, to accumulate the H atoms on the welding seam to form air holes, then execute the second welding to remove said air holes, and it quenches the target material to avoid dispersing left H atoms, to effectively control the hole rate of welding seam.

Description

technical field

[0001] The invention relates to the welding field, in particular to a vacuum electron beam welding method. Background technique

[0002] In the field of semiconductor industry, for the manufacturing process of sputtering target products, it is usually necessary to weld high-purity aluminum or aluminum alloy targets that meet the properties of sputtering targets and high-strength aluminum rings, and then undergo rough machining and finishing. And other processes, and finally processed into sputtering target products with qualified dimensions.

[0003] For sputtering targets, the surface temperature of the target after welding should not be higher than its recrystallization temperature, otherwise it will lead to changes in the size and orientation of the grains inside the target, and the thermal conductivity of aluminum alloy is particularly large, and the heat transfer is rapid. Only by using a very energy-intensive heat source can it be possible to ensure th...

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