A silicon micro piezoelectric sensor chip with split series electrode and its manufacture method
A sensor chip, silicon micro-piezoelectric technology, applied in the direction of sensor, piezoelectric/electrostrictive transducer microphone, piezoelectric/electrostrictive device manufacturing/assembly, etc., can solve the problem of low sensitivity of silicon micro-piezoelectric sensor and other problems to achieve the effect of reducing the impact, improving the sensitivity, and increasing the impedance
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Embodiment 1
[0056] Adopt the inventive method to prepare a silicon micro-piezoelectric sensor chip with segmented series electrodes, and its steps are as follows:
[0057] 1) Clean n-type silicon substrate 1
[0058] Cleaning the n-type silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;
[0059] 2) On the front and back surfaces of the n-type silicon substrate 1, respectively deposit a silicon nitride base film layer 2 with a thickness of 0.2 μm and a silicon nitride mask layer 9 with a thickness of 0.2 μm by using a low-pressure chemical vapor deposition equipment ;
[0060] 3) Preparation of zinc oxide sacrificial layer 3
[0061] Coating a positive photoresist on the surface of the silicon nitride base film layer 2, and exposing by photolithography to form a circular sacrificial layer inverted film photolithographic pattern;
[0062] Then use a high-density plasma etching machine to photoetch t...
Embodiment 2
[0077] Adopt the inventive method to prepare a silicon micro-piezoelectric sensor chip with segmented series electrodes, and its steps are as follows:
[0078] 1) Clean n-type silicon substrate 1
[0079] Cleaning the n-type silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;
[0080] 2) On the front and back surfaces of the n-type silicon substrate 1, a silicon nitride elastic diaphragm 4 with a thickness of 3 μm and a silicon nitride mask layer 9 with a thickness of 2 μm are respectively deposited by using a low-pressure chemical vapor deposition device, as Figure 2b shown;
[0081] 3) Preparation of split lower electrode 5
[0082] On the silicon nitride elastic vibration film 4, a Cr layer with a thickness of 0.1 μm and an Au layer with a thickness of 0.5 μm are sequentially evaporated by vacuum evaporation equipment to form a Cr / Au composite layer; a mask plate containing 2 electro...
Embodiment 3
[0093] Adopt the inventive method to prepare a silicon micro-piezoelectric sensor chip with segmented series electrodes, and its steps are as follows:
[0094] 1) Clean n-type silicon substrate 1
[0095] Cleaning the n-type silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;
[0096] 2) On the front and back surfaces of the n-type silicon substrate 1, a silicon nitride elastic diaphragm 4 with a thickness of 3 μm and a silicon nitride mask layer 9 with a thickness of 2 μm are respectively deposited by using a low-pressure chemical vapor deposition device, as Figure 2b shown;
[0097] 3) Preparation of split lower electrode 5
[0098] On the silicon nitride elastic vibrating film 4, apply photoresist, and use a mask plate containing 8 circular electrode blocks for photolithography exposure to form a reverse pattern of the lower electrode; use magnetron sputtering equipment to sputter 0....
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