Semiconductor light-emitting device with transparent conductive film

一种透明导电膜、发光元件的技术，应用在半导体器件、半导体/固态器件制造、电气元件等方向，能够解决正向工作电压增高、掺杂剂扩散等问题

Inactive Publication Date: 2007-06-06
HITACHI CABLE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, when an ITO film is used for the window layer, there is a problem that contact resistance occurs between the semiconductor layer and the metal oxide, that is, the ITO film, and the forward operating voltage increases.
[0011] However, the present inventors have found that, with the method of Patent Document 3, for example, when an AlGaAs layer with a high Al mixing ratio is used as a material constituting the buffer layer, diffusion of dopants is likely to occur due to heat or the like during growth, and to a significant extent

Method used

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  • Semiconductor light-emitting device with transparent conductive film
  • Semiconductor light-emitting device with transparent conductive film
  • Semiconductor light-emitting device with transparent conductive film

Examples

Experimental program
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Embodiment 1

[0099] As Example 1, an epitaxial wafer for a red LED having an emission wavelength around 630 nm having the structure shown in FIG. 2 was produced. The epitaxial growth method, the film thickness of the epitaxial layer, the structure of the epitaxial layer, the electrode formation method and the LED element manufacturing method are as follows.

[0100] Using the MOVPE method, the following layers are sequentially stacked and grown on the n-type GaAs substrate 1: n-type (Si-doped) GaAs buffer layer 2 (film thickness 200nm, carrier concentration 1×10 18 / cm 3 ), n-type light reflection layer (so-called DBR layer) 3 (carrier concentration 1×10 18 / cm 3 ), n-type (Si-doped) (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P cladding layer 4 (film thickness 400nm, carrier concentration 7×10 17 / cm 3 ), undoped (Al 0.1 Ga 0.9 ) 0.5 In 0.5 P active layer 5 (film thickness 600nm), p-type (Mg-doped) (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P cladding layer 6 (film thickness 300nm, carrier concentration...

Embodiment 2

[0116] As Example 2, an epitaxial wafer for a red LED having a light emission wavelength near 630 nm with the structure shown in FIG. 3 was prepared. The epitaxial growth method, the film thickness of the epitaxial layer, the structure of the epitaxial layer and the manufacturing method of the LED element are basically the same as those of the above-mentioned embodiment 1 (FIG. 2). It is different from the above-mentioned Example 1 in the following points.

[0117]In Example 2, a structure is formed in which an undoped layer is provided as the diffusion preventing layer 14 between the above-mentioned active layer 5 and the above-mentioned p-type cladding layer 6 . The diffusion preventing layer 14 is a layer for preventing the p-type dopant diffused from the p-type semiconductor layer above the layer including the p-type cladding layer from being mixed into the active layer 5 . The composition of this diffusion preventing layer 14 is the same as that of the p-type cladding la...

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Abstract

The present invention provides a semiconductor light-emitting device capable of preventing decrease in light-emitting output in time and increase in a driving voltage in driving the semiconductor light-emitting device in addition to high luminance and low driving voltage. The present inventive light-emitting device is that, a light-emitting portion consists of at least an n-type cladding layer 4, an active layer 5 and a p-type cladding layer 6 is formed on a semiconductor substrate 1, and an As contact layer 7 with heavily-doped p-type dopant Zn is formed on the upper surface of the light-emitting portion, and a current dispersion layer consisting of a transparent conductive film of a metal oxide material is formed on the contact layer 7. This device has a buffer layer consisting of a buffer layer portion of at least two layers or more and having the difference in material or composition between the adjacent buffer layer portions, between the contact layer 7 and the p-type cladding layer 6.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting element having a transparent conductive film, and more particularly to a high-brightness semiconductor light-emitting element using the transparent conductive film as a current spreading layer. Background technique [0002] In recent years, since high-quality crystals of GaN or AlGaInP can be grown by MOVPE, light-emitting diodes (hereinafter referred to as LEDs), which used to be used as semiconductor light-emitting elements, can now be made into blue, green, orange, yellow, and red colors. High-brightness LEDs. [0003] However, in order to obtain high brightness, it is necessary to improve the current spreading characteristics so that the current can be uniformly injected into the chip surface of the LED. To achieve this, it is necessary to grow the current spreading layer to a relatively thick film thickness. For example, for an AlGaInP-based LED element, the film thickness of the cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/12H01L33/30H01L33/42
CPCH01L33/025H01L33/02H01L33/14H01L21/02463H01L21/02546H01L21/02395H01L21/02461
Inventor 今野泰一郎饭塚和幸新井优洋
Owner HITACHI CABLE LTD
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