4H-SiC avalanche photodetector and its preparing method

An avalanche photoelectric and detector technology, applied in the field of photodetectors, achieves high multiplication factor, improved sensitivity, and fast response time

Inactive Publication Date: 2007-06-27
XIAMEN UNIV
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Problems solved by technology

[0003] The purpose of the present invention is to provide a high internal photodetector with high internal Gain, insensitive to visible light and infrared light, 4H-SiC avalanche photodetector that can directly detect ultraviolet light, weak signals and single photon signals and its preparation method

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  • 4H-SiC avalanche photodetector and its preparing method

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Embodiment Construction

[0027] 1 and 2, the 4H-SiC avalanche ultraviolet photodetector of the present invention mainly includes a heavily doped n-type silicon carbide substrate 2, and three epitaxial layers grown sequentially on the substrate from bottom to top, respectively n-type epitaxial absorption layer 11, n-type epitaxial multiplication layer 10 and p + Epitaxial layer 9; the deepest step 3 is used as the isolation between devices, and the upper two mesas are collectively called mesas 5, which are used as the terminal epitaxy of the device structure, suppressing the edge-collection effect of the device current and preventing early breakdown of the device edge; the surface of the sample is covered with oxidation Layer 4; the topmost layer of the device is the photosensitive surface 7 protected by the oxide layer 4. On the photosensitive surface 7 there is a ring-shaped p-type electrode 8 with two insertion wires, and a pad 6 is arranged on the electrode; the back of the whole device is an n-typ...

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Abstract

This invention provides a 4H-SiC snowslide photo-electric detector having high internal gain under low breakdown voltage, not sensitive to visible light and infrared light and testing UV light, weak signals and single-photon signals and its preparation method, in which, the photo-electric detector includes a n+type 4H-SiC substrate, an n-type epitaxial absorption layer, an n-type epitaxial multiplying layer and a p+ epitaxial layer orderly grow from the bottom up on the substrate, a passive film is set on the surface of the device, the epitaxial layer has a p electrode with a weld set on it and an n electrode is set on the back of the substrate, in preparation, the epitaxial plate is cleaned normally to prepare all table-boards then oxidation layer as the passive layer of the chip, the p electrode region is etched to erode the oxidation layer at the electrode pattern place, sputtering Ti / Al / Au as the contact metal of the p electrode to form n-type ohm contact on the back of the substrate.

Description

technical field [0001] The invention relates to a photoelectric detector, in particular to a 4H-SiC-based avalanche semiconductor ultraviolet photodetector with internal gain and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors have important applications in military, industrial and civilian applications. At present, the detection of ultraviolet light generally adopts silicon-based ultraviolet photodetectors, but literature (1. The semiconductor ultraviolet test technology can use the mature silicon technology, but due to the limitation of the energy band of the silicon material itself, the silicon-based photodetector is very sensitive to visible light and infrared light, so when it is used as an ultraviolet photodetector, it is necessary to add complex and expensive filters. The bandgap width of 4H-SiC is about 3.24eV, which makes it possible to directly detect ultraviolet light without considering the influence of visible and infrare...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/18
CPCY02P70/50
Inventor 吴正云朱会丽陈厦平
Owner XIAMEN UNIV
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