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Low pressure vapor phase deposition of organic thin films

Inactive Publication Date: 2001-05-31
FORREST STEPHEN R +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] One advantage of the present invention is that it provides multi-component organic thin films wherein the amount of each component in such films can be controlled accurately and precisely.
[0009] Another advantage of the present invention is that it provides uniform organic thin films having smooth surfaces.
[0010] Another advantage of the invention is that it provides a low pressure organic vapor phase deposition method and apparatus for the growth of thin films of organic light emitting materials and optically non-linear organic salts.
[0011] Another advantage of the invention is that it provides a low pressure organic molecular beam deposition method and apparatus for the formation of thin films of organic light emitting materials and optically non-linear organic salts.
[0012] Yet another advantage of the invention is that it provides a method and apparatus for the uniform deposition of organic materials over large substrate areas.

Problems solved by technology

In contrast, small molecule devices are usually fabricated by thermal evaporation in vacuum, which is usually a more expensive process than spin-on deposition.
However, the OPVD process is conducted at atmospheric pressure, and films grown at or near atmospheric pressure are often rough and have non-uniform surface morphologies due to gas phase nucleation and a diffusion-limited growth process.

Method used

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  • Low pressure vapor phase deposition of organic thin films
  • Low pressure vapor phase deposition of organic thin films
  • Low pressure vapor phase deposition of organic thin films

Examples

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example 1

[0042] Using the apparatus of FIG. 1, layers of organic light emitting materials were grown using glass and flexible polyester substrates precoated with transparent layers of indium tin oxide (ITO). The ITO forms the anode of the device with a thickness of 1700 .ANG. and 1200 .ANG. for the glass and polyester substrates, respectively, yielding anode resistances of 10 .OMEGA. and 60 .OMEGA., respectively. Glass substrates were cleaned by rinsing in a solution of detergent and deionized water in an ultrasonic bath, and then boiling in 1,1,1-trichloroethane, rinsing in acetone and finally rinsing in 2-propanol. To avoid damage due to exposure to organic solvents, the flexible substrates were cleaned by rinsing only in the detergent and 2-propanol solutions.

[0043] Glass substrates were placed within the reactor tube 12 at a location where the temperature was approximately 220.degree. C. The first layer deposited on the ITO surface was TPD, a hole transporting material. Specifically, TPD...

example 2

[0047] An NLO film was prepared using the apparatus shown in FIG. 1. MT 48 was loaded into a 30 cm.sup.3 bubbler 46, the temperature of which was maintained at approximately 80.degree.-100.degree. C. by silicone oil bath 50. Nitrogen gas was used to bubble through the MT 48, thereby carrying MT vapor through glass tube 54 and into reactor tube 12 at a location approximately 5 cm beyond crucible 14, which contained was placed on the floor of reactor tube 12 and DASI. The pressure within reactor tube 12 was maintained at about 10.sup.-2 torr. DAS vapor reacted with the MT vapor to form a solid film of DAST on substrates 58, which were supported on substrate block 60. Excess unreacted MT vapor and any volatile side-reaction products were exhausted from exhaust tube 62. DAST films thus formed are useful as optical switches, for example.

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Abstract

Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Description

FIELD OF THE INVENTION[0002] The present invention relates to the fabrication of optical quality thin films, and more particularly to the low pressure fabrication of such thin films for application in non-linear optical devices and organic light emitting devices.BACKGROUND OF THE INVENTION[0003] The field of organic electroluminescence is a rapidly growing technology. Spurred by potential application to displays, organic light emitting devices (OLEDs) are capable of achieving external quantum efficiencies of over 3%, and operational lifetimes on the order of 10,000 hours at video brightness. Both small molecule and polymer-based OLEDs are known, but polymer-based devices have a general advantage of simple and inexpensive fabrication by spin-on deposition techniques. In contrast, small molecule devices are usually fabricated by thermal evaporation in vacuum, which is usually a more expensive process than spin-on deposition. Examples of OLED structures and processing techniques are pr...

Claims

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Application Information

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IPC IPC(8): H05B33/10C23C16/00C23C16/30H01L51/00H01L51/30H01L51/40H01L51/50
CPCC23C14/12C23C14/568C23C16/30C23C16/45561H01L51/0002H01L51/001H01L51/0059H01L51/0081H01L51/56H10K71/10H10K71/164H10K85/631H10K85/324H10K71/40C23C14/26C23C16/4482Y10S261/65H10K71/00C23C14/50C23C14/54
Inventor FORREST, STEPHEN R.BURROWS, PAUL E.BAN, VLADIMIR S.
Owner FORREST STEPHEN R
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