Method for manufacturing electrode plate having transparent type or reflective type multi-layered conductive film
a technology of conductive film and electrode plate, which is applied in the field of electrode plate, can solve the problems of reducing the reflectance of aluminum due to the lowering of the reflectance of aluminum, the inability to fully utilize the portability of the liquid crystal display device originally, and the inability to fully utilize the portability of the liquid crystal display device, etc., and achieves excellent optical characteristics (transmittance, reflectance), good patterning configuration, and low electrical connection resistance
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first embodiment
[0063] FIG. 1 is a view showing the schematic structure of an electrode plate according to a first embodiment of this invention.
[0064] In FIG. 1, the main portion of an electrode plate 9 according to the first embodiment is constructed by a glass substrate 10 (made by Corning Co. 1737 material) with a thickness of 0.7 mm and an underlaid layer 1 with a thickness of 29 nm, a lower side amorphous oxide layer 2 with a thickness of 10 nm (as will be seen later, the lower side amorphous oxide function as a lower side anchoring layer), a silver-based layer 3 with a thickness of 15 nm, an upper side amorphous oxide layer 4 with a thickness of 10 nm (as will be seen later, the upper side amorphous oxide function as an upper side anchoring layer) and a protection layer 5 with a thickness of 29 nm which are sequentially laminated on the glass substrate 10. The lower side amorphous oxide layer 2, thin silver-based layer 3, and upper side amorphous oxide layer 4 form a multi-layered conductive ...
second embodiment
[0097] FIG. 2 is a view showing the schematic structure of an electrode plate according to a second embodiment of this invention.
[0098] In FIG. 2, the main portion of an electrode plate 19 is formed by forming an underlaid layer 21 formed of SiO.sub.2 with a film thickness of 40 nm on a glass substrate 20 (made by NIHON ITAGARASU KABUSHIKI KAISHA, H coat product) with a film thickness of 0.7 mm and then sequentially laminating a lower side amorphous oxide layer 22 (a lower side anchoring layer) with a film thickness of 20 nm, a silver-based layer 23 with a film thickness of 150 nm, and an upper side amorphous oxide layer 24 (an upper side anchoring layer) with a film thickness of 7 nm. The lower side amorphous oxide layer 22, thin silver-series thin film 23, and upper side amorphous oxide layer 24 form a multi-layered conductive film.
[0099] The electrode plate 19 according to the second embodiment is a reflective type electrode plate since the film thickness of the silver-based laye...
third embodiment
[0125] As shown in FIG. 3, an electrode plate 30 according to a third embodiment of this invention has a laminated film 37 formed on a glass substrate 31 having an SiO.sub.2 (silicon oxide) layer coated on the surface thereof and having an alkali barrier function. The laminated film 37 is formed of a lower side amorphous oxide layer 32, silver-based layer 33 and upper side oxide layer 34 and the upper side oxide layer 34 is a multi-layered layer having a first amorphous oxide layer 35 (anchoring layer) and a second amorphous oxide layer 36 laminated on the first amorphous oxide layer 35. The film thickness of the lower side amorphous oxide layer 32 is set to 25 nm, the film thickness of the silver-based layer 33 is set to 15 nm, the film thickness of the amorphous oxide layer 35 is set to 10 nm, and the film thickness of the second amorphous oxide layer 36 is set to 30 nm. The lower side amorphous oxide layer 32, silver-based layer 33, and upper side oxide layer 34 form a multi-laye...
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Abstract
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