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Method for preparing transparent conductive thin film by rapid thermal annealing method

a technology of transparent conductive and thermal annealing, which is applied in the manufacture of tubes/lamp screens, superimposed coating processes, liquid/solution decomposition chemical coatings, etc., can solve the problems of large difficulty in economical and timely effectiveness of applying such coatings on large surfaces, and large process time losses

Inactive Publication Date: 2002-06-13
SSCP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0017] It is an other object of the present invention to provide an ATO or ITO transparent conductive thin film having superior conductivity and outstanding transparency and hardness prepared by the above methods.
[0021] c) rapidly increasing a temperature of the transparent coating layer to a predetermined temperature, and rapidly cooling the transparent coating layer either immediately or after maintaining the predetermined temperature for up to 20 seconds.

Problems solved by technology

However, compared with the present invention, there have been difficulties in terms of the economical and timely effectiveness in applying such coatings on large spacious windows or on car glass due to high equipment cost and coating area limits, although they can be applied to Liquid Crystal Displays, anti-fogging heating layers, etc.
Secondly, when the spray-coating method is used, a transparent conductive thin film is obtained by spraying the above ATO sol solution on it after the material on which a transparent thin film is to be formed is heated to over 400.degree. C.
First, dozens of minutes are required to increase the temperature to a high temperature of between 300 to 1200.degree. C. during the coating firing. Additionally, superior conductivity and transparency are obtained through the firing and cooling that can take from a few dozen minutes to a few hours according to the temperature employed. Hence, there is a disadvantage in that process time losses are great since the firing time is so long and the cooling time also requires from a few dozen minutes to a few hours.
Secondly, there are various problems when the above is applied to a cathode-ray tube (CRT) or monitor after the preparing process has been finished and the device is completely assembled and holding a vacuum. These adverse effects are represented by the deterioration of internal fluorescent bodies and other components and the operation yield is decreased when the firing is done at a high temperature ranging from 300 to 1200.degree. C. for several hours.
This is because coating capability is deteriorated due to the acidic effects of hydrochloric acid and other acids.

Method used

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  • Method for preparing transparent conductive thin film by rapid thermal annealing method
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  • Method for preparing transparent conductive thin film by rapid thermal annealing method

Examples

Experimental program
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Effect test

example 1

[0059] A transparent coating layer of silicon oxides was formed on a panel outer surface of a CRT by a dip-coating method as a case in which the Rapid Thermal Annealing (RTA) method is applied to a CRT. After drying the transparent coating layer primarily at 100.degree. C., a distance of 1 to 5 cm between the transparent coating layer and a tungsten-halogen lamp in a RTA equipment is maintained, and the temperature was raised to 500.degree. C. in 5 seconds by increasing the temperature with a temperature increasing rate of 100 to 500.degree. C Isec, and then the layer was immediately cooled to 100.degree. C. over 12 seconds. Water containing ethyl cellosolve as a coolant that was added during the cooling and a cooling fan were used simultaneously. Furthermore, the firing or Rapid Thermal Annealing method took place under an argon gas environment.

example 2

[0060] The same method as in EXAMPLE 1 was used except that after increasing the temperature to 600.degree. C. over 5 seconds, the layer was cooled to 100.degree. C. over 18 seconds starting immediately after the temperature reached 600.degree. C. as in the method of the above EXAMPLE 1.

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Abstract

The present invention relates to a transparent conductive thin film and a method for the preparation of the same, and more particularly to a method for the preparation of a transparent conductive thin film comprising the steps of a) preparing a sol solution of antimony-tin oxides (ATO) or indium-tin oxides (ITO), b) forming a transparent coating layer on an outer surface of a cathode ray tube using the sol solution, and c) rapidly increasing a temperature of the transparent coating layer to a predetermined temperature of 300 to 1200° C., and rapidly cooling the transparent coating layer either immediately or after maintaining the predetermined temperature for up to 20 seconds, and a transparent conductive thin film prepared by this preparation method, i.e., a transparent conductive thin film which not only has superior conductivity, high hardness, and non-reflectivity but also saves production process time and increases production process effectiveness, and a method for the preparation of the same.

Description

[0001] This application is based on application No 99-63797 filed in the Korean Industrial Property Office on Dec. 28, 1999, the content of which is incorporated hereinto by reference.[0002] 1. Field of the Invention[0003] The present invention relates to a transparent conductive thin film and its preparation method, more particularly to a transparent conductive thin film consisted of silicon oxides, antimony-tin oxides, and indium-tin oxides which has superior hardness, conductivity, and non-reflexibility, while at the same time obtains a uniformed surface in a timely and economically efficient manner, and a method for the preparation of the same.[0004] 2. Description of the Related Art[0005] Generally, antimony tin oxides (hereinafter referred to as ATO) and indium tin oxides (hereinafter referred to as ITO) thin films are being extensively used in monitors for blocking generated detrimental electromagnetic waves, in transparent electrodes of Liquid Crystal Display components, in ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01B1/02C03C17/25H01J9/20
CPCC03C17/253C03C2217/211C03C2217/231H01J2229/882C03C2218/111C03C2218/113H01J9/20C03C2217/244H01B1/02
Inventor LEE, HYUN-GONKIM, EU-GENEOH, JUNG-HYUNOH, SANG-SOOKIM, JUN-BEOM
Owner SSCP CO LTD
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