Method of manufacturing optical devices and related improvements

US20020131668A1Inactive Publication Date: 2002-09-19UNIV COURT OF THE UNIV OF GLASGOW OF THE UK THE
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
UNIV COURT OF THE UNIV OF GLASGOW OF THE UK THE
Publication Date
2002-09-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of depositing a dielectric layer (51) on at least part of a surface of the device body portion (5) so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise "point" defects.
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Description

[0001] This invention relates to a method of manufacturing of optical devices, and in particular, though not exclusively, to manufacturing integrated optical devices or optoelectronic devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. The invention further relates to Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices.BACKGROUND OF INVENTION

[0002] Quantum Well Intermixing (QWI) Well Intermixing (QWI) is a process which has been reported as providing a possible route to monolithic optoelectronic integration. QWI may be performed in III-V semiconductor materials, eg Aluminium Gallium Arsenide (GaAs) Arsenide (AlGaAs) and Indium Gallium Arsenide (GaAs) Arsenide Phosphide (InGaAsP), which may be grown on binary substrates, eg Gallium Arsenide (GaAs) Arsenide (GaAs) or Indium Phosphide (InP). QWI alters the band-gap of an as-grown str...

Claims

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