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Method of manufacturing optical devices and related improvements

Inactive Publication Date: 2002-09-19
UNIV COURT OF THE UNIV OF GLASGOW OF THE UK THE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0022] It has been surprisingly found that by depositing the dielectric layer used in QWI techniques such as IFVD by sputtering, damage induced point defects are introduced into the portion of the device body portion adjacent the dielectric cap; the portion may, for example, comprise a top or "capping" layer. It is believed that the damage arises due to breakage of bonds in the capping layer before annealing, eg the application of thermal energy by rapid thermal annealing, thereby expediting transfer of Gallium Arsenide (GaAs) from the capping layer into the dielectric layer.

Problems solved by technology

The structural defects may include "point" defects.

Method used

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  • Method of manufacturing optical devices and related improvements
  • Method of manufacturing optical devices and related improvements
  • Method of manufacturing optical devices and related improvements

Examples

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Embodiment Construction

[0082] There now follows an example which illustrates a typical band-gap shift which can be obtained using IFVD in a method of manufacturing an optoelectronic device according to the present invention in a long wavelength aluminium alloy such as Indium Aluminium Gallium Arsenide (GaAs) Arsenide, (InAlGaAs), grown on an Indium Phosphide (InP) substrate.

[0083] The dielectric layer 51 deposition requires a sputter chamber 70 configured in a diode configuration with a cathode / anode (plate) separation of the order to 100 mm. The cathode 80 and anode 85 are each configured as substantially four inch circular plates. The gas used in this example for sputter deposition is typically Argon, but other suitable inert gases may be used, and also small amounts of Oxygen may be added to the Argon Plasma 86, eg approximately 10% by volume, to improve the stoichiometry of the deposited dielectric layer 51. The dielectric material used in the method is typically Silica (SiO.sub.2), but other dielectr...

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PUM

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Abstract

There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of depositing a dielectric layer (51) on at least part of a surface of the device body portion (5) so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise "point" defects.

Description

[0001] This invention relates to a method of manufacturing of optical devices, and in particular, though not exclusively, to manufacturing integrated optical devices or optoelectronic devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. The invention further relates to Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices.BACKGROUND OF INVENTION[0002] Quantum Well Intermixing (QWI) Well Intermixing (QWI) is a process which has been reported as providing a possible route to monolithic optoelectronic integration. QWI may be performed in III-V semiconductor materials, eg Aluminium Gallium Arsenide (GaAs) Arsenide (AlGaAs) and Indium Gallium Arsenide (GaAs) Arsenide Phosphide (InGaAsP), which may be grown on binary substrates, eg Gallium Arsenide (GaAs) Arsenide (GaAs) or Indium Phosphide (InP). QWI alters the band-gap of an as-grown str...

Claims

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Application Information

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IPC IPC(8): H01S5/026H01S5/20H01S5/34
CPCB82Y20/00H01S5/026H01S5/0265H01S5/2063H01S5/2068H01S5/3413H01S5/3414
Inventor MARSH, JOHN HAIGHAMILTON, CRAIG JAMESMCDOUGALL, STEWART DUNCANKOWALSKI, OLEK PETER
Owner UNIV COURT OF THE UNIV OF GLASGOW OF THE UK THE
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