Custom electrodes for molecular memory and logic devices

a logic device and molecular memory technology, applied in the field of nanoscale computing and memory circuits, can solve the problems of decreasing the number of electrons either accessed or utilized within the device, becoming increasingly difficult to design well-behaved devices, and increasing the difficulty of fabrication and cost, so as to achieve low diffusion, high melting point, and high bulk modulus
US20050026427A1Inactive Publication Date: 2005-02-03BECK PATRICIA A +3
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
BECK PATRICIA A
Publication Date
2005-02-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] The present application is related to U.S. Pat. No. 6,459,095, issued Oct. 1, 2002, entitled “Chemically Synthesized and Assembled Electronic Devices”, which is directed to the formation of nanowires used for nanoscale computing and memory circuits. The present application is also related to U.S. Pat. No. 6,314,019, issued Nov, 6, 2001, entitled “Molecular Wire Crossbar Interconnect (MWCI) for Signal Routing and Communications”, and to U.S. Pat. No. 6,128,214, entitled “Molecular Wire Crossbar Memory”, issued on Oct. 3, 2000, as well as to application Ser. No. 09 / 280,045, entitled “Molecular Wire Crossbar Logic (MWCL)”, and Ser. No. 09 / 280,188, entitled “Molecular Wire Transistor (MWT)”, both filed on Mar. 29, 1999, which are all directed to various aspects of memory and logic circuits utilized in nanocomputing. The present application is also related to application Ser. No. 09 / 823,195, filed Mar. 29, 2001, entitled “Bistable Molecular ...

Claims

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