Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device

Inactive Publication Date: 2005-02-17
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0030] According to a fourth aspect of the present invention, there is provided a method for manufacturing the solid-state image sensing device of the third aspect of the present invention. In this manufacturing method, after the first-conductivity-type layer is formed on the opposite-conductivity-type buried layer, the opposite-conductivity-type layer is formed by ion implantation. This manufacturing method allows for the manufacture of a solid-state image sensing device that can deal with various spectral characteristics, by changing the thickness of the epitaxial layer.
[0031] According to a fifth aspect of the present invention, there is provided a method for manufacturing the solid-state image sensing device of the third aspect of the present invention. In this manufacturing method, the opposite-conductivity-type buried layer is formed in such a manner that, after ions are implanted into the first-conductivity-type semiconductor substrate, ions are implanted into the opposite-conductive-type buried layer. This manufacturing method allows for formation of a uniform buried layer within a surface in the depth direction with high reproducibility by ion implantation, when there is no need to have a significantly high spectral sensitivity at a longer wavelength.
[0032] In addition, an isolation region may be provided between adj

Problems solved by technology

The former, as compared to the latter, are widely used as high-definition image sensing devices, due to their high sensitivity and low noise, but, on the other hand, have some disadvantages.
Specifically, the power consumption and the drive voltage are high and the cost is high since a general semiconductor manufacturing process cannot be used.
Additionally, it is difficult to integrate peripheral circuits, such as a drive circuit.
Additionally, although various improvements have been made to CMOS solid-state image sensing devices, there is still a problem in that the sensitivity is low, particularly, in a device having a small pixel size.
However, since the n-type cathode region is formed in the p well region 12 by ion implantation, the doping concentration cannot be reduced so significantly.
This conventional structure also has a problem in that the n-type cathode 15 c

Method used

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  • Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device
  • Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device
  • Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device

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first embodiment

[0053] First Embodiment

[0054]FIG. 1 is a schematic sectional view of a solid-state image sensing device according to a first embodiment of the present invention.

[0055] In FIG. 1, reference numeral 101 represents a semiconductor substrate having a first-conductivity-type (n-type in this case by way of example), 102 is a p well which is a second-conductivity-type semiconductor region, and 103 is an n-type semiconductor region which is formed in the p well 102 and which is a first-conductivity-type semiconductor region. The p well 102 and the n-type semiconductor region 103 constitute a photodiode. Signal charge that is generated from incident light is stored in the n-type semiconductor region 103. Reference numeral 111 represents a drain region of a transfer transistor, which is a first transistor, for transferring signal charge generated by the photodiode. The drain region has the first conductivity type and serves as an FD region and an n-type semiconductor region formed in the p w...

second embodiment

[0065] Second Embodiment

[0066]FIG. 2 is a schematic sectional view of a solid-state image sensing device according to a second embodiment of the present invention.

[0067] More specifically, FIG. 2 is a schematic sectional view of a solid-state image sensing device having a photodiode, a transfer transistor and a reset transistor for resetting an FD electrode 211. Thus, this solid-state image sensing device has a reset transistor, serving as a second transistor, for resetting the FD electrode 211.

[0068] In FIG. 2, reference numeral 223 represents a gate electrode of the reset transistor for resetting the FD electrode 211 and reference numeral 224 represents a drain region of the reset transistor and is connected to a power-supply line 226.

[0069] This embodiment is different from the first embodiment described above in that a potential barrier 205 is also provided under the gate electrode 223 of the second transistor. Thus, the potential barrier 205 reduces the amount of signal char...

third embodiment

[0077] Third Embodiment

[0078]FIG. 3 is a schematic sectional view of a solid-state image sensing device according to a third embodiment of the present invention.

[0079] Specifically, FIG. 3 is a schematic sectional view of a solid-state image sensing device having a photodiode, a transfer transistor, and a reset transistor for resetting an FD electrode 311.

[0080] Referring to FIG. 3, an n well or n-type semiconductor region 303 is provided as a first-conductivity-type semiconductor region at a layer above an n-type semiconductor substrate 301. A p-type semiconductor region 302 is provided as a second-conductivity-type semiconductor region. The p-type semiconductor region 302 and the n-type semiconductor region 303 constitute a photodiode. A first-conductivity-type signal-charge storing region 312 collects and stores signal charge generated by the photodiode and has a doping concentration higher than the n-type semiconductor region 303.

[0081] The difference between the configuratio...

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Abstract

A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a solid-state image sensing device and a camera system using the same. [0003] 2. Description of the Related Art [0004] In recent years, the demand for solid-state image sensing devices has been rapidly increasing for use in image capturing apparatuses, such as, mainly, digital still cameras and video camcorders. As such solid-state image sensing devices, CCDs (Charge Coupled Devices) or MOS solid-state image sensing devices have been used. The former, as compared to the latter, are widely used as high-definition image sensing devices, due to their high sensitivity and low noise, but, on the other hand, have some disadvantages. Specifically, the power consumption and the drive voltage are high and the cost is high since a general semiconductor manufacturing process cannot be used. Additionally, it is difficult to integrate peripheral circuits, such as a drive circuit. [0005] For these...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/335H04N5/369H04N5/374
CPCH01L27/14603H01L27/14609H01L27/1463H01L27/14689H01L27/14643H01L27/14654H01L27/14656H01L27/14632H01L27/146
Inventor SHINOHARA, MAHITOINOUE, SHUNSUKE
Owner CANON KK
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