Plasma immersion ion implantation apparatus

a technology of plasma and ion implantation, which is applied in the direction of electrical equipment, electrical discharge tubes, decorative arts, etc., can solve the problems of low quality deposited layer that is less crystalline and more amorphous, rough surface of the wafer, and excessive sheet resistan
US20050230047A1Inactive Publication Date: 2005-10-20APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
APPLIED MATERIALS INC
Publication Date
2005-10-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation-in-part of U.S. application Ser. No. 10 / 929,104, filed Aug. 26, 2004 entitled GASLESS HIGH VOLTAGE HIGH CONTACT FORCE WAFER CONTACT-COOLING ELECTROSTATIC CHUCK by Douglas A. Buchberger, Jr., et al. This application is also a continuation-in-part of U.S. application Ser. No. 10 / 838,052, filed May 3, 2004 entitled LOW TEMPERATURE CVD PROCESS WITH CONFORMALITY, STRESS AND COMPOSITION by Hiroji Hanawa, et al., which is a continuation-in-part of U.S. application Ser. No. 10 / 786,410, filed Feb. 24, 2004 entitled FABRICATION OF SILICON-ON-INSULATOR STRUCTURE USING PLASMA IMMERSION ION IMPLANTATION by Dan Maydan, et al., which is a continuation-in-part of U.S. application Ser. No. 10 / 646,533, filed Aug. 22, 2003 entitled PLASMA IMMERSION ION IMPLANTATION PROCESS USING A PLASMA SOURCE HAVING LOW DISSOCIATION AND LOW MINIMUM PLASMA VOLTAGE, which is a continuation-in-part of U.S. application Ser. No. 10 / 164,327,...

Claims

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