Supercharge Your Innovation With Domain-Expert AI Agents!

Photosensitive polymer and chemically amplified photoresist composition including the same

a photoresist composition and polymer technology, applied in the field of photosensitive polymer and chemically amplified photoresist composition, can solve the problems of steep patterns that cannot be formed by the conventional g-line(436 nm) or i-line(365 nm) exposure process, and are not stabl

Inactive Publication Date: 2005-12-08
DONGJIN SEMICHEM CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0040] In Table 1, the relative sensibility means an optimal energy (Eop). As shown in Table 1, the chemically amplified photoresist compositions of the present invention prepared in Examples 5-14 have resolutions that are much excellent compared to those of the compositions prepared in the Comparative examples 1 and 2. Accordingly, the fine circuit patterns can be formed even with the exposure light source of 248 nm. As described above, the photosensitive polymer and the chemically amplified photoresist composition according to the present invention has a merit in that the footing phenomenon is not generated even if there is the PED between the exposure process and the PEB process. Also, the photosensitive polymer and the chemically amplified photoresist composition according to the present invention have an excellent resolution even when using the exposure light source of a short wavelength so that the fine circuit pattern can be formed.
[0041] While the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that various modifications and substitutions can be made thereto without departing from the spirit and scope of the present invention as set forth in the appended claims.

Problems solved by technology

Also, the patterns formed by the conventional G-line(436 nm) or I-line(365 nm) exposure process are not stable, and the steep patterns cannot be formed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photosensitive polymer and chemically amplified photoresist composition including the same
  • Photosensitive polymer and chemically amplified photoresist composition including the same
  • Photosensitive polymer and chemically amplified photoresist composition including the same

Examples

Experimental program
Comparison scheme
Effect test

example 1

Synthesis of poly(HS-co-DEES-co-Styrene-co-CBCPS)

(Formula 1a)

[0024] a) Synthesis of 4-Cyanomethylstyrene(CyMS)

[0025] As shown in the following Reaction 1a, 49.01 g of sodium cyanide (NaCN), 70.07 g of water and 50.96 g of ethanol were added into a 500 ml 4-neck flask equipped with a mechanical stir, and the temperature of the solution was elevated to 60° C. to completely dissolve NaCN. To the solution, 87.50 g of 4-chloromethylstyrene was slowly added and the reaction was carried out for 3 hours at the temperature of 60-70° C. After completion of the reaction, the solution was cooled to 40° C., 100 g of diethylether was added to the solution, and the diethylether layer was separated. The separated organic layer was extracted with 300 g of water three times. The water layer was extracted with 50 g of diethylether and the diethylether extract was added to the organic layer. The separated organic layer was dried with magnesium sulfate for one day, and then the organic solvent was r...

example 2

Synthesis of poly(HS-co-pEES-co-pTBS-co-CBCPS)

(Formula 1b)

[0029] As shown in the following Reaction 2, except for using 17.63 g of para-tert-butoxy styrene instead of 10.42 g of styrene as the monomer, using 2.27 g of AIBN as the initiator and using 11.89 ml of 28 weight % NH3 aqueous solution, the same method as described in Example 1 was carried out to obtain 47.73 g of poly(HS-co-pEES-co-pTBS-co-CBCPS) of Formula 1b.

[0030] In Reaction 2,1-x-y-z, x, y and z are the same as defined in Formula 1.

example 3

Synthesis of poly(HS-co-DEES-co-tBocS-co-CBCPS)

(Formula 1c)

[0031] a) Synthesis of Poly(HS-co-pEES-co-CBCPS)

[0032] As shown in the following Reaction 3a, 200 ml of tetrahydrofuran(THF) was introduced into a 500 ml 4-neck flask equipped with a refluxing cooler, a temperature controlling apparatus and a nitrogen gas introducing apparatus, and was stirred for 30 minutes with introducing nitrogen. To the reactor, 58.39 g of 4-acetoxystylene, 53.83 g of 4-(1-ethoxy)-ethoxystylene, 15.98 g of CBCPS prepared in Example 1(b), and 2.23 g of AIBN as the initiator were added. The temperature of the reactor was elevated to 40° C. and the reactant was stirred for 30 minutes under a nitrogen atmosphere. The temperature of the reactor was then elevated to 60-70° C. and the reactant was stirred for 24 hours under reflux. After completion of the reaction, the temperature of the reactant was lowered to room temperature(25° C.) and the reactant was poured into 2 l of hexane to obtain the precipitat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
polydispersityaaaaaaaaaa
widthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1, wherein R1 is a hydrogen atom, R2 is a hydrogen atom, R3 is a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CH2NH2, CONH2, CH═NH, CH(OH)NH2 or C(OH)═NH group, R4 is a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.

Description

FIELD OF THE INVENTION [0001] This invention relates to a photosensitive polymer and a chemically amplified photoresist composition including the same. More specifically, this invention relates to a photosensitive polymer for forming high-resolution fine circuit patterns by using a deep UV exposure light source of a short wavelength, and a chemically amplified photoresist composition including the same. BACKGROUNDS OF THE INVENTION [0002] As the degree of integration of a semiconductor integrated circuit has increased 4-fold for 3 years, a dynamic random access memory (hereinafter “DRAM”) having the memory capacity of more than one gigabit has been developed. To produce such a large capacity DRAM, there is a need for the development of a photosensitive polymer and a photoresist composition capable of forming a fine photoresist pattern whose line width is of 0.18 μm. [0003] Generally, the photolithography process for the semiconductor manufacturing process includes the steps of a) un...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/004C08F8/12C08F212/14G03C1/492G03F7/039H01L21/027
CPCC08F12/22C08F12/26C08F212/14C08K5/36G03F7/0045G03F7/0392C08L25/14C08L25/18C08F212/08C08F212/22C08F212/24C08F212/26G03F7/039
Inventor KIM, DEOG-BAEKIM, SANG-JEOUNGKIM, HWA-YOUNGJEGAL, JINKIM, JAE-HYUN
Owner DONGJIN SEMICHEM CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com