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Resistor with improved switchable resistance and non-volatile memory device

a resistor and switchable resistance technology, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of time-consuming and hardly reproducible forming process, variability of memory cell properties, etc., and achieve high probability and reproducibility of electronic and electric properties.

Inactive Publication Date: 2006-01-12
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] Therefore, it is an aspect of the present invention to provide resistors with bistable switchable resistance, methods for fabricating a resistor with bistable switchable resistance, and methods for forming a switching resistance filament in a dielectric material which facilitate a filament forming. This is faster and easier to perform and produces more reproducible results.
[0019] The present invention provides the advantage that the conductive filament is localized to the confined strain field which in term is generated at a predetermined position. As a consequence of the localization, there is a high probability that only one filament is generated. Furthermore, the localization of the filament results in a high reproducibility of the electronic and electric properties of the device.

Problems solved by technology

The time-consuming and hardly reproducible forming process and the variability of the properties of the memory cells are severe drawbacks of conventional resistors with bistable switchable resistance and of devices comprising such a resistor.

Method used

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  • Resistor with improved switchable resistance and non-volatile memory device
  • Resistor with improved switchable resistance and non-volatile memory device
  • Resistor with improved switchable resistance and non-volatile memory device

Examples

Experimental program
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Effect test

first embodiment

[0077] A further effect of the straining element 18 is a local enhancement of the electrical field in the insulating dielectric material. This enhancement contributes to the localization of the filament in the first embodiment, too.

[0078] The straining element 18 has the shape of a microtip or dot which is grown, deposited or etched on the first electrode 12. Its shape may be the shape of a semi-spherical hillock as shown in FIG. 1. The straining element 18 is made of a metal, such as Pt, Mo or W, a metallic oxide, such as SrRuO3 or RuO2, a silicide, such as CoSi2, a nitride, such as TaN, W2N, or a combination thereof. According to preferred embodiments the straining element 18 can be grown epitaxially or not, can be monocrystalline, polycrystalline or amorphous and can be integral with the first electrode 12. Preferentially, the straining element 18 can be integral with the first electrode 12 and made of a highly doped Si region. Advantageously, the size and shape of the straining ...

third embodiment

[0095] The first electrode 12 at least partially covers the surfaces of the piezo-element 42 protruding from the front surface 26 of the substrate 10. Thereby, the first electrode 12 of the third embodiment is an example for an electrode including a protrusion, or convex feature, which is caused by an element positioned between the electrode and the substrate.

[0096] The insulating dielectric material 14 is deposited on top of the first electrode 12 in a more or less uniform manner. In the vicinity of the point 28 of the first electrode 12, the insulating dielectric material 14 is sandwiched between the first electrode 12 and a second electrode 16. The insulating layer 30 covers most of the insulating dielectric material 14. The insulating layer 30 has a small hole in the vicinity of the point 28 through which the second electrode 16 is in contact with the insulating dielectric material 14. A further insulation layer 46 provides secure electrical insulation of the first electrode 12 ...

fourth embodiment

[0102]FIG. 4 is a schematic view of a vertical cross-section of a resistor according to a Again, on top of the substrate 10 the insulating dielectric material 14 is sandwiched between the first electrode 12 and the second electrode 16. The first electrode 12 comprises a protrusion 48 directed towards the second electrode 16. The protrusion 48 causes a deviation of the shape of the layer of the insulating dielectric material 14 from the flat form with parallel plane surfaces and a laterally constant thickness. Thereby, the protrusion 48 of the first electrode 12 generates a local strain field in the insulating dielectric material 14. The effect of this strain field is the same as in the above-described embodiments 1 to 3.

[0103]FIG. 5 is a schematic view of a vertical cross-section of a resistor according to a fifth preferred embodiment. An SOI wafer (SOI=silicon on isolator) comprises a bulk silicon substrate 10, a buried oxide layer (BOX-layer) 52 (isolator) and a highly doped semi...

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Abstract

Provides a resistor with improved switchable resistance and non-volatile memory device. An example resistor includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.

Description

FIELD OF THE INVENTION [0001] The present invention is directed to a resistor with bistable switchable resistance, to a non-volatile memory cell and a non-volatile memory device with the resistor, and to a method for fabricating an insulating dielectric structure with a confined conductive region. BACKGROUND OF THE INVENTION [0002] For memory devices and for numerous other applications, bistable devices or circuits are used. For example, for storing one bit of information in a memory, a bistable device can be used which is switchable between (at least) two different and persistent states. When writing a logical “1” into the device, it is driven into one of the two persistent states and when writing a logical “0”, or erasing the logical “1”, the device is driven into the other of the two different states. Each of the states persists until a next step of writing information into the device or erasing information in the device proceeds. A huge number of such bistable devices arranged i...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L23/62H01L21/338
CPCH01L27/20H01L27/2463H01L45/04H01L45/16H01L45/1273H01L45/147H01L45/1233H10B63/80H10N39/00H10N70/20H10N70/8418H10N70/826H10N70/8836H10N70/011
Inventor ROSSEL, CHRISTOPHE P.DESPONT, MICHEL
Owner GLOBALFOUNDRIES INC
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