Norbornene polymer for photoresist and photoresist composition comprising the same

a technology of norbornene polymer and composition, which is applied in the direction of photosensitive materials, auxillary/base layers of photosensitive materials, instruments, etc., can solve the problems of affecting the composition, affecting the composition, and affecting the composition, etc., to achieve the effect of improving light transmittance, improving mechanical and thermal properties, and low dielectric constan

Inactive Publication Date: 2006-08-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Therefore, embodiments of the present invention have been made in view of the above problems of the related art, and it is an object of embodiments of the present invention to provide a photoresist composition with superior mechanical and thermal properties, low dielectric constant, and improved light transmittance.

Problems solved by technology

Accordingly, the dissolution of the novolac resin is promoted due to the decomposition of the DNQ in exposed regions, but the dissolution of the novolac resin is hampered by the crosslinking between the DNQ and the novolac resin in unexposed regions.
For example, interlayer insulating films often have a large thickness due to their poor insulating properties, but they are required to have improved flatness before use.
However, when photosensitive resin compositions as interlayer insulating films have a large thickness, the transparence of the compositions is inevitably deteriorated with increasing thickness of the films.

Method used

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  • Norbornene polymer for photoresist and photoresist composition comprising the same
  • Norbornene polymer for photoresist and photoresist composition comprising the same
  • Norbornene polymer for photoresist and photoresist composition comprising the same

Examples

Experimental program
Comparison scheme
Effect test

example 2

PREPARATIVE EXAMPLE 2

Synthesis of Poly(tBN-co-GlyN-co-MA)

[0049] 15.0 g (77.2 mmol) of t-butyl norbomene carboxylate (tBN), 6.42 g (33.1 mmol) of glycidyl norbomene carboxylate (GlyN), 10.81 g (110.3 mmol) of purified maleic anhydride (MA), and 0.362 g (2.2 mmol) of 2,2′-azobisisobutyronitrile (AIBN) as a polymerization initiator were placed in a polymerization flask, and 33 g of purified tetrahydrofuran was added thereto. The resulting solution was polymerized according to the same procedure as in Preparative Example 1 to give 11.86 g (yield: 37%) of the target polymer (Mw =6,520) as a white solid. The target polymer has a formula according to Formula 4, below:

example 3

PREPARATIVE EXAMPLE 3

Synthesis of Poly(tBN-co-GlyN-co-NB-co-MA-co-tBMA)

[0050] 5.0 g (25.7 mmol) of t-butyl norbomene carboxylate (tBN), 6.66 g (34.3 mmol) of glycidyl norbomene carboxylate (GlyN), 3.22 g (34.2 mmol) of norbomene (NB), 8.41 g (85.8 mmol) of purified maleic anhydride (MA), 3.66 g (25.7 mmol) of t-butyl methacrylate, and 0.20 g (1.2 mmol) of 2,2′-azobisisobutyronitrile (AIBN) as a polymerization initiator were placed in a polymerization flask, and 27 g of purified tetrahydrofuran was added thereto. The resulting solution was polymerized according to the same procedure as in Preparative Example 1 to give 18.86 g (yield: 70%) of the target polymer (Mw=10,800) as a white solid. The target polymer has a formula according to Formula 5, below:

example 4

PREPARATIVE EXAMPLE 4

Synthesis of Poly(NCA-co-GlyN-co-NB-co-DEMMA)

[0051] 2.23 g (16.14 mmol) of 5-norbomene-2-carboxylic acid (NCA), 6.26 g (32.2 mmol) of glycidyl norbomene carboxylate (GlyN), 6.26 g (66.5 mmol) of norbomene (NB), 18.69 g (80.5 mmol) of a maleate monomer (DEMMA) prepared by the reaction of chloromethylethyl ether and maleic acid, and 0.32 g (1.95 mmol) of 2,2′-azobisisobutyronitrile (AIBN) as a polymerization initiator were placed in a polymerization flask, and then 34 g of purified tetrahydrofuran was added thereto. The resulting solution was polymerized according to the same procedure as in Preparative Example 1 to give 14.05 g (yield: 42%) of the target polymer (Mw=6,200) as a white solid. The target polymer has a formula according to Formula 6, below:

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Abstract

Disclosed herein is a photoresist composition which includes a norbomene copolymer having an epoxy group, an acid generator, and an organic solvent. The norbomene polymer shows superior mechanical and thermal properties, high transparency, excellent insulating properties, and particularly, improved mechanical properties due to the presence of an epoxy group. The photosensitive resin composition shows superior performance, e.g., transparence, developing properties, residual film characteristics, chemical resistance, heat resistance, and flatness. Particularly, since the photosensitive resin composition enables easy formation of a pattern as an interlayer insulating film and shows a high light transmittance even when being formed into a thin film with a relatively large thickness, it is suitable for the production of an interlayer insulating film used in the fabrication processes of LCDs.

Description

[0001] This non-provisional application claims priority under 35 U.S.C. § 119(a) on Korean Patent Application No. 2005-13600 filed on Feb. 18, 2005, which is herein expressly incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] Embodiments of the present invention relate to a photosensitive resin composition for a photoresist used in the fabrication processes of liquid crystal displays (LCDs), and a photoresist composition comprising the photosensitive resin composition. More particularly, embodiments of the present invention relate to a norbomene copolymer having an epoxy group, and a photoresist composition comprising the norbomene copolymer wherein the composition shows excellent mechanical and thermal properties, superior performance, including insulation, flatness, chemical resistance, etc., ease of pattern formation, high light transmittance, and is thus suitable for the formation of an interlayer insulating film of a device, such as a...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03C1/76
CPCC08F232/08G03F7/0395G03F7/40Y10S430/106G03F7/0397
Inventor LEE, JAE JUNKIM, DO YUNJUNG, MYUNG SUP
Owner SAMSUNG ELECTRONICS CO LTD
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