Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content

a technology of chalcogenide materials and chalcogenide devices, which is applied in the direction of bulk negative resistance effect devices, basic electric elements, electric devices, etc., can solve the problems of affecting the stability of the material, the material needs to be thermally stable, and the material is susceptible to variations in the structural state, so as to achieve sufficient thermal stability, improve the thermal stability of data retention, and achieve sufficient thermal stability
US20070034850A1Inactive Publication Date: 2007-02-15OVONYX
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
OVONYX
Publication Date
2007-02-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and / or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and / or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
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Description

FIELD OF INVENTION

[0001] This invention pertains to chalcogenide materials having applications as electrical and optical memories and switches. More particularly, this invention relates to chalcogenide materials showing high reproducibility of electrical resistance upon transformation from a primarily amorphous state to a primarily crystalline state on repeated cycles and to chalcogenide materials exhibiting high thermal stability. Most specifically, this invention is concerned with off-tieline chalcogenide alloys in the Ge—Sb—Te family having a low Ge concentration. BACKGROUND OF THE INVENTION

[0002] Chalcogenide materials are an emerging class of commercial electronic materials that exhibit switching, memory, logic, and processing functionality. The basic principles of chalcogenide materials were developed by S. R. Ovshinsky in the 1960's and much effort by him and others around the world since then have led to advancements of the underlying science and an expansion of the field ...

Claims

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