Method for Preparing Nano Metallic Particles

a nano-metal and nano-particle technology, applied in the direction of magnetic bodies, superimposed coating processes, transportation and packaging, etc., can solve the problems of complex fabrication process, and the array of nano-metal particles, so as to achieve high fabrication and time costs and lower costs

Inactive Publication Date: 2008-05-08
IND TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0011]The conventional nano metallic particle array technologies all have disadvantages concerning complicated fabrication processes and high fabrication and time costs. The present invention provides a direct method for preparing nano metallic particles with lower costs and larger process windows to control the distribution and size of the nano particles, requiring only a surface treating process (e.g., bombarding the surface of the conductive substrate with plasma) to be performed on the conductive substrate without the complicated fabrication process.

Problems solved by technology

The conventional nano metallic particle array technologies all have disadvantages concerning complicated fabrication processes and high fabrication and time costs.

Method used

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  • Method for Preparing Nano Metallic Particles

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Embodiment Construction

[0024]FIGS. 1(a) and 1(b) illustrate methods for preparing nano metallic particles 16 according to the present invention. A conductive substrate 12 is dipped in an electroplating solution 20 containing metallic ions 22, and an electroplating process (e.g., cyclic voltammery electroplating process) is then performed to form nano metallic particles 16 on the conductive substrate 12 by the reduction reaction of the metallic ions 22. Preferably, the size of the nano metallic particles 16 is between 1 nm and 150 nm. Preferably, the conductive substrate 12 includes indium-tin-oxide (ITO) with the lattice size between 5 nm and 500 nm. The electroplating solution 20 may include nickel nitrate, nickel sulfate or nickel chloride, and the nano s metallic particles 16 may be nickel metallic particle. In addition, the electroplating solution 20 may contain magnetic metallic ions such as iron ions or cobalt ion, and the nano metallic particles 16 may be magnetic metallic particles such as iron pa...

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Abstract

A method for preparing nano metallic particles comprises the steps of dipping a conductive substrate in an electroplating solution containing metallic ions and performing an electroplating process to form the nano metallic particles on the conductive substrate by the reduction reaction of the metallic ions. The nano metallic particles can be used as a catalyst to perform a chemical vapor deposition process to form carbon nanotubes on the conductive substrate. Subsequently, fluorescent material can be positioned on the carbon nanotubes to form a light-emitting device. When a predetermined voltage is applied between the conductive substrate and the fluorescent material, the carbon nanotubes on the conductive substrate emit electrons due to the point discharge effect, and the electrons bombard the fluorescent material to emit light beams.

Description

BACKGROUND OF THE INVENTION[0001](A) Field of the Invention[0002]The present invention relates to a method for preparing nano metallic particles, and more particularly, to a method for preparing nano metallic particles by reducing metallic ions with an electroplating process.[0003](B) Descriptions of the Related Art[0004]Recently researchers have developed many nano metallic particle array technologies based on different principles, for example, electron beam writing method, anode alumina template method, micro-contact printing method and block macromolecular template method.[0005]Although the electron beam writing method (see Adv. Mater. 2003, 15, 49, Vol. 16, p. 3246, 2001) may randomly and precisely implant nano metallic particles, the writing process is quite time consuming and is not suitable for mass production processes requiring efficiency and large area. In additions, it is necessary for the electron beam writing method to use a complicated lithography etching process, and ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C28/02C25D5/48C25D3/12C25D3/20C25D5/00
CPCB22F2998/00B82Y25/00B82Y30/00C25D5/02C25D5/18C25D7/001C25D5/54H01F1/0045C25D5/34C25D7/006B22F1/0018C25D5/617B22F1/054B22F1/056
Inventor TSENG, YU TSANLIN, CHENG HSUANSHIAO, PO LING
Owner IND TECH RES INST
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