Non-Volatile Memory with Predictive Programming

a technology of predictive programming and non-volatile memory, which is applied in the field of non-volatile semiconductor memory, can solve the problems of unsuitable mobile and handheld environment, bulky disk drives, and inability to meet the needs of mobile and handheld environments, and achieve the effect of improving the performance of programming operations
US20080253193A1Active Publication Date: 2008-10-16SANDISK TECH LLC
24 Cites 45 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SANDISK TECH LLC
Publication Date
2008-10-16

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive programming mode in which a predetermined function predicts what programming voltage level needs to be applied in order to program a given memory cell to a given target threshold voltage level. In this way, no verify operation needs to be performed, thereby greatly improving the performance of the programming operation. In a preferred embodiment, the predetermined function is linear and is calibrated for each memory cell under programming by one or more checkpoints. A checkpoint is a set of coordinates on the predetermined function determined by a conventional programming mode employing alternating program and verify operations.
Need to check novelty before this filing date? Find Prior Art

Description

CROSS REFERENCE TO RELATED APPLICATION

[0001] This application is also related to the following U.S. patent application: U.S. application Ser. No. ______, entitled “Predictive Programming for Non-Volatile Memory” by Raul Adrian Cernea, filed concurrently herewith, on Apr. 10, 2007.FIELD OF THE INVENTION

[0002] This invention relates generally to non-volatile semiconductor memory such as electrically erasable programmable read-only memory (EEPROM) and flash EEPROM, and specifically to memory and programming operations in which the number of program-verify operations is minimized.BACKGROUND OF THE INVENTION

[0003] Solid-state memory capable of nonvolatile storage of charge, particularly in the form of EEPROM and flash EEPROM packaged as a small form factor card, has recently become the storage of choice in a variety of mobile and handheld devices, notably information appliances and consumer electronics products. Unlike RAM (random access memory) that is also solid-state memory, flash memory...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More