Methods and apparatus for a chemical vapor deposition reactor

Abstract

Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Application Ser. No. 61 / 057,788, filed May 30, 2008; U.S. Provisional Application Ser. No. 61 / 104,284, filed Oct. 10, 2008; and U.S. Provisional Application Ser. No. 61 / 122,591, filed December 15, 2008, the disclosures of which are hereby incorporated by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the invention generally relate to methods and apparatuses for vapor deposition, and more particularly, to chemical vapor deposition processes and chambers.[0004]2. Description of the Related Art[0005]Chemical vapor deposition (“CVD”) is the deposition of a thin film on a substrate, such as a wafer, by the reaction of vapor phase chemicals. Chemical vapor deposition reactors are used to deposit thin films of various compositions on the substrate. CVD is highly utilized in many activities, such as during the fabrication of devices for...

AI Technical Summary

Benefits of technology

The invention is about a system for supporting and carrying substrates (such as wafers) through a chemical vapor deposition process. The system includes a substrate carrier with at least one indentation pocket on its lower surface. The substrate carrier can be designed to have a specific geometry and can be made from graphite. The system also includes a gas stream that forms a gas cushion under the substrate carrier to support it during the process. The substrate carrier can be moved along a path within the processing chamber to control the movement of the substrate. The technical effect of the invention is to provide a more stable and efficient way to support and move substrates during chemical vapor deposition processes.

Problems solved by technology

These distinct designs address a variety of challenges that are encountered during a CVD process, such as depletion effects, contamination issues, and reactor maintenance.

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