Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of forming a power device

a technology of power devices and manufacturing methods, applied in the direction of basic electric elements, semiconductor devices, electrical equipment, etc., can solve the problems of device integration and limit the development of trench power mosfets

Inactive Publication Date: 2010-03-04
ANPEC ELECTRONICS CORPORATION
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]It is therefore an objective of the present invention to provide a method for forming a power device for increasi

Problems solved by technology

However, the design rules for ensuring the performance therefore restricts device integrations and channel densities of the trench power MOSFET 10, and limits the development of the trench power MOSFET 10.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of forming a power device
  • Method of forming a power device
  • Method of forming a power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015]Please refer to FIG. 2 through FIG. 10. FIG. 2 through FIG. 9 are schematic diagrams illustrating a method for forming a power device according to a preferred embodiment of the present invention, and FIG. 10 is a flow chart illustrating the above-mentioned embodiment, where like numbered numerals designate similar or the same parts, regions or elements. The formed power device can include the trench power MOSFET. It is to be understood that the drawings are not drawn to scale and are served only for illustration purposes.

[0016]As shown in FIG. 2 and the step 200 of FIG. 10, a substrate 112 is first provided. The substrate 112 can include silicon substrate, such as a N+ doped substrate or a P+ doped substrate. The substrate 112 defines a cell region 102 and a plug-contacting region 104 thereon. The cell region 102 and the plug-contacting region 104 can construct an active region. Subsequently, a semiconductor layer 114 is formed in the substrate 112 by epitaxy. Taking N-type MO...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a method for manufacturing a power device, and more particularly, to a method for manufacturing a trench power device capable of increasing the channel density of MOS devices.[0003]2. Description of the Prior Art[0004]Power devices are typical semiconductor devices in power management applications, such as a switching power supply, a power control IC of a computer system or peripherals, a power supply of a backlight, motor controller, etc. Power devices can be various kinds of transistors, such as an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field effect transistor (MOSFET) and a bipolar junction transistor (BJT). With advantages of fewer power-consumption and faster switching-speed, the MOSFETs are widely adopted in various arts.[0005]Furthermore, developments of trench MOSFETs become an important tendency, because trench MOSFETs can provide a lower electric ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336
CPCH01L21/26586H01L29/4236H01L29/7813H01L29/66734H01L29/456
Inventor LIN, WEI-CHIEHHSU, HSIN-YUCHIU, HSIN-YENHUNG, SHIH-CHIEHCHEN, HO-TAIYEH, JEN-HAOLIN, LI-CHENG
Owner ANPEC ELECTRONICS CORPORATION