Protecting integrity of data in multi-layered memory with data redundancy
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[0027]U.S. patent application Ser. No. 11 / 095,026, filed Mar. 30, 2005, entitled “Memory Using Mixed Valence Conductive Oxides,” and published as U.S. Pub. No. US 2006 / 0171200 A1 on Aug. 3, 2006, is herein incorporated by reference in its entirety and for all purposes, and describes non-volatile third dimensional memory elements that may be arranged in a two-terminal, cross-point memory array. The memory elements can be a component of a memory cell that includes electrically in series with the memory element, other structures including but not limited to a non-ohmic device (NOD) and electrodes. New non-volatile memory structures are possible with the capability of this third dimensional memory array. The technology allows for the emulation of other memory technologies by duplicating the interface signals and protocols, while accessing the third dimensional memory array. The third dimensional memory array may emulate other types of memory (e.g., DRAM, SRAM, FLASH, and ROM), providing...
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