Photonic devices formed of high-purity molybdenum oxide

Abstract

The present invention is directed to photonic devices which emit or absorb light with a wavelength shorter than that GaN photonic devices can emit or absorb.The devices according to the present invention are formed using molybdenum oxide of a high purity as a light emitting region or a light absorbing region. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.The devices according to the present invention can be formed at a temperature relating low such as 700° C.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor photonic devices formed of high-purity molybdenum oxide which emit or absorb light with a short wavelength.[0003]More particularly, the present invention relates to new light emitting diodes which emit blue light and have possibility to overcome problems accompanying to devices made up of known semiconductors such as gallium nitride (GaN) or silicon carbide (SiC). Moreover, the invention relates to photonic devices which emit light with a wavelength shorter than 361 nm in which GaN light-emitting diodes can emit or selectively absorb light having a wavelength shorter than 361 nm.[0004]2. Related Background Art[0005]Light emitting diodes which emit blue light have developed recently in order to realize three primary colors of light and to obtain light with a shorter wavelength for digital video disc (DVD). Developed blue-light emitting devices use gallium nitride (GaN) as ...

AI Technical Summary

Benefits of technology

"The present invention is about creating photonic devices that can emit or absorb light with a shorter wavelength than traditional GaN devices. The devices are made using a high purity molybdenum oxide material, which allows for the creation of affordable photonic devices that emit light from blue to deep ultraviolet rays. The devices can be formed at a relatively low temperature, such as 700°C."

Problems solved by technology

Although blue light can be obtained from GaN devices, there are some difficult problems.

At first, bulk crystal of GaN has not been obtained because an equilibrium vapor pressure of nitrogen is very high relative to that of gallium.

GaN cannot be formed directly on a sapphire substrate because there is lattice mismatch of 16% between sapphire and GaN.

AlN is resistive because it is difficult to dope impurities into AlN.

A structure and its fabrication process, therefore, are severely restricted.

On the other hand, SiC substrates are very expensive because bulk crystal of SiC can be grown at a very high temperature of 2200-2400° C.

Moreover, ZnO has many problems to be solved to realize practical devices.

In addition, a new blue-light emitting device made up of new material is expected because present blue-light emitting devices have many problems as described above.

The problem to be solved to realize a new device is to obtain a new substrate which replaces expensive substrate such as sapphire or SiC.

The second problem is to realize new semiconductor which can be grown at a lower temperature at which GaN or SiC layers are formed.

In addition, there are possibilities that atoms move between layers and a composition is disturbed or dopants move near the interface between layers.

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