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Method for selectively removing hydrogen from molecules

a technology of selective removal and hydrogen from molecules, applied in the field of material synthesis, can solve the problems of toxic reactive species, environmental harm, or cost, and the process described by rabalais et al. cannot be used to selectively remove hydrogen from molecules

Inactive Publication Date: 2011-10-06
THE CHINESE UNIVERSITY OF HONG KONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is about methods for selectively removing hydrogen atoms from molecules on the surface of a substrate or that are part of the substrate. This can be useful for creating materials with specific properties, such as electronic devices, photonic devices, and medical devices. The method involves depositing molecules with hydrogen atoms on the substrate and then using hydrogen projectile particles to remove the hydrogen atoms without affecting other atoms in the molecule. This results in a layer of molecules with fewer hydrogen atoms, which can then be further processed. The invention also includes a composite article with a layer of molecules with fewer hydrogen atoms and a substance anchored to the layer through active reaction sites. The potential applications for the invention are wide-ranging.

Problems solved by technology

Further, some of these reactive species are toxic, environmentally harmful, or costly.
The processes described by Rabalais et al. cannot be used to selectively rupture hydrogen from a molecule.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0054]Dotriacontane, CH.sub.3(CH.sub.2).sub.30CH.sub.3, was selected to test for selective bond breaking using 10 eV H.sup.+ions as projectile particles in a bombardment process. This molecule is large enough so that it does not desorb in vacuum even without cooling. It can be coated uniformly by spin coating on a substrate such as a silicon wafer. In addition, dotriacontane has a linear molecular structure and contains only saturated C—C and C—H bonds, which eases the determination of any structural changes in the synthetic process.

[0055]The substrate, a Si (100) wafer, was pre-treated with ultrasonic cleaning in a methanol bath followed by a 1.1 M HF solution dip for removing organic contamination and surface oxides. Hyperthermal ion bombardment of the dotriacontane film with H.sup.+in the energy range of 5-100 eV was carried out in a mass-and-energy-selective low energy ion beam (LEIB) system. The surface was characterized using an XPS system having a Kratos ASIS-HS spectrometer ...

example 2

[0063]Docosanoic acid, CH.sub.3(CH.sub.2).sub.20COOH, was used instead of dotriacontane. Docosanoic acid molecules were spin-cast onto a cleaned silicon wafer. The ion beam treatment conditions and characterization methods are similar to EXAMPLE 1.XPS showed that the virgin docosanoic acid molecules were removed by dissolution in hexane, and that H.sup.+bombardment at 10 eV caused cross-linkage of docosanoic acid molecules without breaking other bonds in the molecules. The resulting film could not be dissolved in hexane. Repeated AFM imaging showed that the film was coherent and mechanically strong. When a sample without the hydrogen bombardment treatment was exposed to air for 15 days, XPS showed that the Si surface was oxidized while another sample with the ion beam treatment showed no Si oxidation.

example 3

[0064]Docosanoic acid, CH.sub.3(CH.sub.2).sub.20COOH, was spin-coated on polyethylene. The ion beam treatment conditions and characterization methods are similar to EXAMPLE 1, except that a source of low energy electrons was used to neutralize any excessive surface charge during ion bombardment. XPS confirmed that carboxylic acid functional groups were anchored to the polymer surface.

[0065]In the present description, example embodiments are given with reference to specific configurations and techniques. One of ordinary skill in the art would appreciate that other embodiments having other configurations and method steps are possible. For example, any conventional production technique can be used to produce the composition of the coating(s), so long as the technique is competent to produce the desired composition. For example, the relative concentrations of the materials in the coatings, of course, may be varied, and impurities may be tolerated, so long as the resulting formulations a...

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Abstract

Methods for removing hydrogen from molecules are disclosed. In one embodiment, hydrogen-containing molecules are deposited on a solid substrate and are bombarded with hydrogen projectile particles. The particles may have energies of 5-100 eV, or more preferably 10-50 eV. The hydrogen projectile particles remove hydrogen atoms from the deposited molecules while they are on the substrate, without removing other atoms from the molecules. Dangling bonds are created by the loss of hydrogen and can be used to cross-link the molecules. The resulting product can be a nanometer-thick dense film.

Description

CROSS REFERENCE TO RELATED U.S. APPLICATION[0001]This patent application is a Divisional application of U.S. patent application Ser. No. 10 / 374,550 filed on Feb. 25, 2003 in the name of the same inventors, in English, entitled “METHOD FOR SELECTIVELY REMOVING HYDROGEN FROM MOLECULES” which is incorporated herein by reference in its entirety.FIELD OF THE INVENTION[0002]Embodiments of the invention relate to the field of materials synthesis.BACKGROUND OF THE INVENTION[0003]Rupturing or removing hydrogen atoms from a hydrogen-containing molecule is commonly referred as hydrogen abstraction in chemistry. A number of reactants can be used in hydrogen abstraction. Common reactants include hydrogen atoms, halogen atoms, hydroxyl radicals, and other radical species. Although the reactants are reactive, an activation energy is still commonly required for hydrogen abstraction and some reactions thus require adequate thermal energy (A. A. Zavitsas, Journal of American Chemical Society 120(1998...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B05D3/10B05D1/18B05D3/00B05D3/06B29C35/08B29C59/16C23C8/02C23C8/36C23C8/80C23C14/58C23C16/452C23C16/56C23G5/00
CPCB05D1/185B05D3/007B05D3/06B29C59/16B29C2035/0877C23C8/02C23G5/00C23C8/80C23C14/5833C23C14/5873C23C16/452C23C16/56C23C8/36
Inventor KWOK, R. W. M.LAU, W. M.
Owner THE CHINESE UNIVERSITY OF HONG KONG