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Copper Plating Solutions and Method of Making and Using Such Solutions

a technology of copper plating solution and solution, applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems of high cost of silver paste, inability to meet the requirements of use,

Inactive Publication Date: 2014-10-09
OMG ELECTRONICS CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present technology relates to copper plating solutions and methods of making and using them. The copper plating solution is pH-controlled and free of chloride ions. This technology can be used in the manufacture of printed circuit boards and solar silicon wafers. The method involves contacting the substrate with the copper plating solution for a certain time period, resulting in a coating of copper on the substrate. The coating can be used for various applications such as providing electrical conductivity or preventing corrosion. The technology is useful in providing high-quality coating of copper onto various substrates.

Problems solved by technology

However, silver pastes are very expensive.
Copper plating solutions containing chelated compounds are not always desirable because the waste treatment of chelated copper solutions is more costly than non-chelated copper solutions.
Alkaline copper plating solutions are not always desirable because alkaline solutions require a chelator or strong complexor like cyanide.
Cyanide is a poison and is a health risk.
Applicants determined that chloride ions and acid containing plating solutions are not suitable for certain plating applications.
For example, such solutions are not suitable for plating over metal seed layers on silicon solar cell wafers.
The acid will cause delamination of the seed layer meaning that the conductive seed layer to the silicon wafer (usually silver paste or electroless nickel seed layer) will lose adhesion to the silicon wafer surface and will easily peel off.
The chloride ions will adversely affect materials on the backside of the solar cell wafer, such as the aluminum paste by causing the aluminum paste to dissolve into the copper plating solution.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0037]In one non-limiting embodiment, a solar cell with an efficiency of 18% is electroplated in a solution containing 80 g / L copper sulfate pentahydrate, 100 g / L lithium sulfate, pH adhusted to 2.3 with sulfuric acid or sodium hydroxide. A silver paste containing solar cell with an aluminum containing backside is electroplated at 50 ASF for 2 minutes. A matte copper deposit is obtained on the silver paste seed layer. The efficiency of the solar cell after plating increased to 19%, the aluminum backing of the solar cell remained unaffected by the plating solution. The silver paste seed layer adhesion to the silicon wafer was not compromised.

example 2

[0038]In one non-limiting embodiment, a solar cell with an efficiency of 18% is electroplated in a solution containing 80 g / L copper sulfate pentahydrate, 100 g / L lithium sulfate, 0.2 g / L of a thio-imidazole compound, the pH is adjusted to 2.3 with sulfuric acid or sodium hydroxide. A silver paste containing solar cell with aluminum back is light induced plated at 50 ASF for 2 minutes. A bright copper deposit is obtained on the silver paste seed layer. The efficiency of the solar cell after plating increased to 19.2%, the aluminum backing of the solar cell remained unaffected by the plating solution. The silver paste seed layer adhesion to the silicon wafer was not compromised.

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Abstract

The present technology generally relates to copper plating solutions. Specifically, the present technology includes a copper plating solution comprising a source of copper ions and a conductivity salt wherein the copper plating solution has a pH between 1.7 and 3.5 as is essentially free of chloride ions. The present technology also relates to a method of using such copper plating solutions.

Description

RELATED APPLICATION(S)[0001]This application claims priority to U.S. Provisional Application No. 61 / 792,190, filed on Mar. 15, 2013. The above-identified application is hereby incorporated herein by reference in its entirety.FIELD OF THE INVENTION[0002]The present technology generally relates to copper plating solutions and methods of making and using such solutions. Specifically, the present technology includes a copper plating solution comprising a source of copper ions and a conductivity salt wherein the copper plating solution has a pH between 1.7 and 3.5 as is essentially free of chloride ions. The present technology also relates to a method of using such copper plating solutions. This technology could be useful in the manufacture of printed circuit boards and solar silicon wafers.BACKGROUND OF THE INVENTION[0003]The present application is related to copper plating. Copper plating is used in a number of technical fields, for example in the field of printed circuitry. Copper can...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C25D3/38C25D7/12
CPCC25D3/38C25D7/126H01L31/02167C25D5/011H01L31/068Y02E10/547
Inventor BERNARDS, ROGERBELLEMARE, RICHARD
Owner OMG ELECTRONICS CHEM INC
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