Photoresist and post etch residue cleaning solution

Abstract

A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising:A. a polar aprotic solvent,B. an inorganic base;C. a co-solvent for said inorganic base;D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; andE. an organic base comprising an amine compound.The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.

Description

1. CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a divisional of U.S. application Ser. No. 13 / 651,790 filed on Oct. 15, 2012, which claims priority to U.S. Provisional Application Ser. No. 61 / 557,229 filed Nov. 8, 2011, the disclosures of which are incorporated herein by reference in its entirety.2. FIELD OF THE INVENTION

[0002] The present disclosure relates to a cleaning solution for removing residues from semiconductor substrates, and particularly to remove post etch residues from wafers.3. BACKGROUND OF THE INVENTION

[0003] The technology of fabricating semiconductor integrated circuits has advanced with regard to the number of transistors, capacitors and other electronic devices which can be fabricated on a single integrated circuit chip. This increasing level of integration has resulted in large part from a reduction in the minimum feature sizes of the integrated circuits and an increase in the number of layers and functionality which make up the integrated circu...

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