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Substrate processing apparatus and substrate processing method using substrate processing apparatus

Inactive Publication Date: 2015-09-17
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a process for adjusting the silicon concentration in a chemical solution used for processing substrates. This adjustment is necessary when using a constant amount of phosphoric acid aqueous solution. The text also mentions that using infrared rays can efficiently heat the chemical liquid on the substrate. The technical effect of this patent is to improve processing efficiency by adjusting silicon concentration in a chemical solution and using infrared rays to efficiently heat the substrate.

Problems solved by technology

Therefore, it is difficult to keep silicon concentration, of the phosphoric acid aqueous solution supplied to a plurality of substrates, constant.
In this manner, it is difficult to perform uniform processing with high accuracy on the plurality of substrates.
Therefore, processing efficiency of the substrates is reduced.

Method used

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  • Substrate processing apparatus and substrate processing method using substrate processing apparatus
  • Substrate processing apparatus and substrate processing method using substrate processing apparatus
  • Substrate processing apparatus and substrate processing method using substrate processing apparatus

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Experimental program
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Effect test

first embodiment

[1] First Embodiment

[0083]A substrate processing apparatus according to the present embodiment is a single-substrate processing apparatus that processes substrates one by one. In the substrate processing apparatus, a high temperature phosphoric acid aqueous solution (H3PO4+H2O) including silicon is supplied as a processing liquid to a substrate on which a silicone oxide film made of silicon oxide (SiO2) and a silicon nitride film made of silicon nitride (Si3N4) are formed. In this case, the phosphoric acid aqueous solution includes silicon, so that an etching rate of the silicone oxide film is reduced. Thus, the silicon nitride film is selectively etched.

[0084]Silicon is present in the phosphoric acid aqueous solution because the silicon nitride film is etched by the phosphoric acid aqueous solution or a liquid concentrate including silicon particles is mixed in the phosphoric acid aqueous solution, for example.

[0085](1) Configuration of Substrate Processing Apparatus

[0086]FIG. 1 is...

second embodiment

[2] Second Embodiment

[0177]In the first embodiment, the first tank 5 is only used to supply the phosphoric acid aqueous solution to the processor 1. Further, the second tank 6 and the third tank 7 are used to collect the phosphoric acid aqueous solution and adjust the silicon concentration and phosphoric acid concentration of the phosphoric acid aqueous solution.

[0178]However, the phosphoric acid aqueous solution may be supplied from each of the first tank 5, the second tank 6 and the third tank 7 to the processor 1. Further, each of the first tank 5, the second tank 6 and the third tank 7 may be used to collect the phosphoric acid aqueous solution and adjust the silicon concentration and phosphoric acid concentration of the phosphoric acid aqueous solution.

[0179]FIG. 11 is a schematic view showing the configuration of a substrate processing apparatus according to the second embodiment. The substrate processing apparatus 100 of FIG. 11 has the same configuration as the substrate pro...

third embodiment

[3] Third Embodiment

[0192]A substrate processing apparatus according to the present embodiment is a single-substrate processing apparatus that processes substrates one by one. In the substrate processing apparatus, a high temperature phosphoric acid aqueous solution (H3PO4+H2O) including siloxane is supplied as a high temperature chemical liquid to a substrate on which a silicone oxide film made of silicon oxide (SiO2) and a silicon nitride film made of silicon nitride (Si3N4) are formed. In this case, the phosphoric acid aqueous solution includes siloxane, so that an etching rate of the silicone oxide film is reduced. Thus, the silicon nitride film is selectively etched.

[0193]Siloxane is a collective term for a compound including a Si—O—Si bond of compounds that are made of dioxide, oxygen and hydrogen, and is represented by a general formula (H3SiO—H2SiO)n—SiH3).

[0194]In the following description, a liquid mixture of ammonia water and hydrogen peroxide water is referred to as SC1....

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Abstract

In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate processing apparatus that performs various processing on a substrate and a substrate processing method using the substrate processing apparatus.[0003]2. Description of Related Art[0004]Conventionally, substrate processing apparatuses have been used to subject various types of substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs and other substrates to various types of processing.[0005]There is a batch-type substrate processing apparatus that soaks a plurality of substrates in a processing liquid stored in a processing tank and performs processing such as etching. For example, the batch-type substrate processing apparatus described in JP 2009-94455 A includes a processing tank ...

Claims

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Application Information

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IPC IPC(8): H01B19/04
CPCH01B19/04H01L21/67051H01L21/67057H01L21/0206H01L21/31111H01L21/67017H01L21/6708
Inventor HINODE, TAIKIOTA, TAKASHISAITO, KAZUHIDEYAMADA, KUNIO
Owner DAINIPPON SCREEN MTG CO LTD
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