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Mtj structures, stt MRAM structures, and methods for fabricating integrated circuits including the same

Active Publication Date: 2019-04-25
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Abstract
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Benefits of technology

This patent describes structures and methods for making magnetic tunnel junctions (MTJs) and spin transfer torque magnetic random access memory (STT MRAM) devices. The MTJs and STT MRAM devices contain a cobalt iron carbon (CoFeC) layer or layers. The methods described involve forming the electrodes and layers in a specific order and using specific materials. The technical effect of this patent is that it provides more efficient and reliable methods for making MTJs and STT MRAM devices, which can be used in the fabrication of integrated circuits.

Problems solved by technology

However, boron may diffuse from the boron doped cobalt iron material and form boron oxide, particularly during post-anneal processing.
Thus, conventional techniques undesirably lead to reduced thermal budget and reduced thermal endurance of the pMTJ stack.

Method used

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  • Mtj structures, stt MRAM structures, and methods for fabricating integrated circuits including the same
  • Mtj structures, stt MRAM structures, and methods for fabricating integrated circuits including the same
  • Mtj structures, stt MRAM structures, and methods for fabricating integrated circuits including the same

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Embodiment Construction

[0018]The following detailed description is merely exemplary in nature and is not intended to limit the magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, integrated circuits including such structures, or methods for fabricating such integrated circuits. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background or brief summary, or in the following detailed description.

[0019]For the sake of brevity, conventional techniques related to conventional device fabrication may not be described in detail herein. Moreover, the various tasks and processes described herein may be incorporated into a more comprehensive procedure or process having additional functionality not described in detail herein. In particular, various techniques in semiconductor fabrication processes are well-known and so, in the interest of brevity, many conventional techniques ...

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Abstract

Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.

Description

TECHNICAL FIELD[0001]The technical field generally relates to integrated circuits, and more particularly relates to integrated circuits with magnetic tunnel junction (MTJ) structures, such as spin transfer torque magnetic random access memory (STT-MRAM) structures.BACKGROUND[0002]A magnetic memory cell or device stores information by changing electrical resistance of a magnetic tunnel junction (MTJ) element. The MTJ element typically includes a thin insulating tunnel barrier layer sandwiched between a magnetically fixed layer and a magnetically free layer, forming a magnetic tunnel junction. Magnetic orientations of the fixed and free layers may be in a vertical direction, forming a perpendicular MTJ (or pMTJ) element. The pMTJ element could be either in a bottom pinned pMTJ element or a top pinned pMTJ element. The bottom pinned pMTJ element is formed by having the magnetically fixed layer disposed below the magnetically free layer while the top pinned pMTJ element is formed by hav...

Claims

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Application Information

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IPC IPC(8): H01F10/32H01L43/08H01L43/02H01L43/10H01L43/12G11C11/16
CPCH01F10/3286H01L43/08H01L43/02H01L43/10H01L43/12G11C11/161H01F10/3254H01F10/329H01F10/16H10B61/22H10N50/85H10N50/10H10N50/01H10N50/80
Inventor SHUM, DANNY PAKCHUMPOH, FRANCIS YONGWEECHEN, JINGSHENGCHEN, SHAOHAI
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD
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