Modified colloidal silica and method for producing the same, and polishing agent using the same
a colloidal silica and polishing agent technology, applied in the direction of lapping machines, silicon compounds, other chemical processes, etc., can solve the problem of fluctuation of the polishing rate of sin to tetraethyl orthosilicate (teo) or polycrystalline silicon (poly-si) over time, and achieve the effect of improving the stability of the polishing speed with tim
Inactive Publication Date: 2019-10-10
FUJIMI INCORPORATED
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AI Technical Summary
Benefits of technology
The modified colloidal silica stabilizes polishing speed over time and reduces adhesion of silica particles to SiN wafers, enhancing the uniformity and efficiency of the polishing process.
Problems solved by technology
In performing the technique described in JP 2012-040671 A, the present inventors tried to use the modified colloidal silica produced by the method described in JP 2010-269985 A and JP 2013-41992 A. As a result, it was found that there is a problem that when a SiN wafer is polished by using a polishing composition containing anionic modified colloidal silica that has been produced by using the techniques described in these conventional arts, the ratio of the polishing rates of SiN to tetraethyl orthosilicate (TEOS) or polycrystalline silicon (poly-Si) fluctuates over time.
Method used
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Experimental program
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Effect test
example 1
[0074]In a flask, 4080 g of methanol, 610 g of water, and 168 g of 29% by mass ammonia aqueous solution were mixed, the temperature of the resultant mixture was kept at 20° C., and into the mixture, a mixture of 135 g of methanol and 508 g of tetramethoxysilane (TMOS) was added dropwise over 25 minutes. After that, the resultant mixture was subjected to heat concentration and water replacement under a condition of pH 7 or more, and 1000 g of 19.5% by mass silica sol was obtained. It was confirmed by gas chromatography (the following condition 1) that the methanol concentration at that time was less than 1% by mass (lower than the detection limit).
[0075](Condition 1: Measurement Conditions for Methanol Concentration Using Gas Chromatography)
Apparatus: Gas chromatography GC-14B (manufactured by Shimadzu Corporation)
Measurement: 4 μL of a sample is taken out using a 10 μL syringe and injected to the apparatus. The methanol concentration is calculated from the amount of moisture and the...
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Abstract
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.Modified colloidal silica, being obtained by modifying raw colloidal silica, whereinthe raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
Description
TECHNICAL FIELD[0001]The present invention relates to modified colloidal silica and a method for producing the same, and a polishing agent using the same.BACKGROUND ART[0002]In a semiconductor device production process, as the performance of a semiconductor device is improved, techniques for producing the wiring with higher density and higher integration are required. In a production process of such a semiconductor device, chemical mechanical polishing (CMP) is an essential process. As the miniaturization of the semiconductor circuit progresses, it is demanded to realize the high flatness required for the unevenness of a pattern wafer and also to realize the high smoothness of nano order by CMP. In order to realize the high smoothness by CMP, it is preferred that the convex portion of the pattern wafer is polished at a high polishing speed but the concave portion is not polished so much.[0003]Herein, for example, in a case of using a pattern wafer made of a silicon nitride film (SiN...
Claims
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IPC IPC(8): C09G1/02C01B33/148C01B33/146C09K3/14H01L21/304C07F7/02H01L21/3105B24B37/04B24B37/00C01B33/149
CPCC07F7/025C09G1/02H01L21/304C01P2004/03C01B33/146H01L21/31053C01P2004/51C01B33/148H01L21/76819B24B37/044C01P2004/61C09K3/1436B24B37/00C01B33/149C09K3/14C09K3/1409
Inventor ASHITAKA, KEIJITSUBOTA, SHOGO
Owner FUJIMI INCORPORATED