Etching device and operating method thereof

Abstract

A device includes a chamber, a wafer holder, a gas source, a vacuum sealing device, and an inductive coil. The wafer holder is disposed in the chamber. The wafer holder has a wafer-mounting surface in parallel with a gravity direction. The gas source is configured to generate gas. The vacuum sealing device is connected between the gas source and the chamber. The inductive coil is wound around the vacuum sealing device to excite the gas into plasma.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to U.S. Provisional Application Ser. No. 62 / 775,370, filed Dec. 4, 2018, the disclosures of which are incorporated herein by reference in their entireties.BACKGROUNDTechnical Field[0002]The present disclosure relates to a device and a method for performing an etching process. More particularly, the present disclosure relates to a device and a method of performing a dry etching process, such as photoresist stripping.Description of Related Art[0003]In current semiconductor industry, a dry etching process is generally used to perform photoresist stripping. Moreover, while an operation of transferring a photoresist pattern is performed, the dry (plasma) etching process has an advantage of high accuracy, and thus the plasma etching process is used for processing a large amount of wafers on semiconductor production lines.[0004]However, the plasma etching process often generates a large amount of particles, such a...

AI Technical Summary

Benefits of technology

The patent is about a method and device for etching wafers. The method involves placing the wafer on a holder that has a surface parallel to gravity, which prevents particles from falling on the top of the wafer. This reduces contamination and improves the performance of the wafer.

Problems solved by technology

However, the plasma etching process often generates a large amount of particles, such as negatively charged by-products generated by chemical mechanisms and attached with electrons due to exposure to the plasma.

As a result of the interaction between the magnetic field and the electric field in a chamber, the negatively charged by-products are suspended above the wafer and are not easily to be removed.

Therefore, after the plasma etching process is performed, the suspended negatively charged by-products (particles) drop on the top surface of the wafer, thus causing contamination.

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