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Semiconductor laser element

a laser element and semiconductor technology, applied in semiconductor lasers, laser output parameters control, laser details, etc., can solve the problem of strong magnetic field required for writing, and achieve the effect of small chip size and high output power

Pending Publication Date: 2022-03-03
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor laser element that can achieve high output power and reliability through the use of AlGaAs layers as cladding layers, which reduces serial resistance and heat generation compared to traditional InGaAlP layers. Additionally, an end surface window structure is formed to suppress laser light absorption and catastrophic optical damage, resulting in improved life extension of the semiconductor laser element. The heater in the arrangement can control the temperature of the semiconductor laser element, ensuring stable operation.

Problems solved by technology

Although a thermally stable recording medium is required to record signals into microscopic regions while securing thermal stability of the signals, this gives to rise to a dilemma that a strong magnetic field is required for writing.

Method used

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  • Semiconductor laser element
  • Semiconductor laser element
  • Semiconductor laser element

Examples

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first embodiment

[1] First Embodiment

[0083]FIG. 1 is a perspective view of an outer appearance of a semiconductor laser element according to a first preferred embodiment of the present invention. FIG. 2 is a front view of the semiconductor laser element of FIG. 1. FIG. 3 is a plan view of the semiconductor laser element of FIG. 1. FIG. 4 is a bottom view of the semiconductor laser element of FIG. 1. FIG. 5 is an illustrative sectional view taken along line V-V of FIG. 3. FIG. 6 is an illustrative sectional view taken along line VI-VI of FIG. 3.

[0084]This semiconductor laser element 60 is of a Fabry-Perot type that includes a substrate 1, a semiconductor laminated structure (semiconductor laminated structure in the narrow sense) 2 that is formed by crystal growth on the substrate 1, an n side electrode 3 that is formed such as to contact a rear surface (surface at an opposite side to the semiconductor laminated structure 2) of the substrate 1, and a p side electrode 4 that is formed such as to contac...

second embodiment

[2] Second Embodiment

[0140]FIG. 21 is a sectional view of a semiconductor laser element according to a second preferred embodiment of the present invention and is a sectional view corresponding to the section plane of FIG. 6. In FIG. 21, portions corresponding to respective portions in FIG. 6 described above are indicated by attaching the same symbols as in FIG. 6.

[0141]In comparison to the semiconductor laser element 60 of FIG. 1 to FIG. 6, the present semiconductor laser element 60A differs just in the point that the p type contact layer 21 in the semiconductor laser element 60 is not provided. That is, this semiconductor laser element 60A has the p side electrode 4 formed on front surfaces of the capping layer 20 and the current constriction layers 5.

third embodiment

[3] Third Embodiment

[0142]FIG. 22 is a sectional view of a semiconductor laser element according to a third preferred embodiment of the present invention and is a sectional view corresponding to the section plane of FIG. 6. In FIG. 22, portions corresponding to respective portions in FIG. 6 described above are indicated by attaching the same symbols as in FIG. 6.

[0143]In comparison to the semiconductor laser element 60 of FIG. 1 to FIG. 6, the p type contact layer 21 in the semiconductor laser element 60 is not provided in the present semiconductor laser element 60B. Further, with the semiconductor laser element 60B, the current constriction layers 5 differ from the current constriction layers 5 of the semiconductor laser element 60.

[0144]Each current constriction layer 5 is constituted of a first layer 51 oriented along a front surface of the p type InGaP etching stop layer 17 and a second portion 52 oriented along the side surfaces of the ridge 30. The current constriction layer 5...

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Abstract

A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.

Description

TECHNICAL FIELD[0001]The present invention relates to a semiconductor laser element.BACKGROUND ART[0002]To increase a storage capacity of a hard disc drive (HDD), signals must be written into microscopic regions of the disc. Although a thermally stable recording medium is required to record signals into microscopic regions while securing thermal stability of the signals, this gives to rise to a dilemma that a strong magnetic field is required for writing. Now that recording density is reaching saturation with the existing GMR (giant magneto resistance) method, realization of a “thermally assisted recording” method is being desired. The “thermally assisted recording” method is a method in which writing is performed while temporarily weakening a force that holds a magnetic field by using a laser diode (semiconductor laser element) as a heat source.CITATION LISTPatent Literature[0003]Patent Literature 1: Japanese Patent Application Publication No. 7-111367[0004]Patent Literature 2: Jap...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01S5/343H01S5/223H01S5/06H01S5/042H01S5/02
CPCH01S5/3434H01S5/2231H01S5/0202H01S5/04256H01S5/0612H01S5/0207H01S5/209H01S5/2275H01S5/34366H01S5/3213H01S5/2031H01S5/3404H01S5/04252H01S5/162H01S5/02453H01S5/0261H01S5/0014H01S2301/145G11B2005/0021
Inventor HIROKAWA, YUKIISHIDA, YUJINISHIMOTO, YOSHIO
Owner ROHM CO LTD