Array substrate for liquid crystal display device
a liquid crystal display and array substrate technology, applied in semiconductor devices, instruments, electrical devices, etc., can solve the problems of ips mode lcd device having limiting the area of the pixel region, and lcd device using the vertical electric field perpendicular to the array substrate has a relatively narrow viewing angl
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first embodiment
[0028]FIG. 2 is a plan view showing an array substrate for a fringe field switching mode liquid crystal display device according to the present invention.
[0029]In FIG. 2, a gate line 113 and a data line 130 are formed in a display region on a substrate 101 for a fringe field switching (FFS) mode liquid crystal display (LCD) device. Each of the gate line 113 and the data line 130 includes a metallic material. For example, at least one of aluminum (Al), aluminum alloy such as aluminum neodymium (AlNd), copper (Cu), copper alloy, molybdenum (Mo) and molybdenum alloy such as molybdenum titanium (MoTi) may be used for each of the gate line 113 and the data line 130. The gate line 113 and the data line 130 cross each other to define a region P. For example, the data line 130 may include first and second data lines 130a and 130b spaced apart from each other and parallel to a vertical direction, and the pixel region P may include first and second pixel regions P1 and P2 disposed along the v...
second embodiment
[0057]FIGS. 6, 7 and 8 are cross-sectional views showing an array substrate for a fringe field switching mode liquid crystal display device according to the present invention. FIGS. 6, 7 and 8 show cross-sections corresponding to lines IV-IV and V-V, respectively, of FIG. 2.
[0058]In FIGS. 6 to 8, a buffer layer 203 is formed on a substrate 201. The buffer layer 203 may include an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx), and the substrate 201 may include a transparent insulating material such as glass or plastic. When amorphous silicon is crystallized to polycrystalline silicon, an alkali ion such as potassium ion (K+) or sodium ion (Na+) may be erupted from the substrate by a laser or a heat. The buffer layer 203 blocks the alkali ion to prevent deterioration of a semiconductor layer of polycrystalline silicon due to the alkali ion. The buffer layer 203 may be omitted in another embodiment.
[0059]A semiconductor layer 205 of polycrystallin...
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