The invention relates to a
semiconductor device and a preparation method, and relates to the technical field of semiconductors, in the
semiconductor device and the preparation method, a
dielectric layer with a first groove is arranged on a substrate, then a grid
electrode is formed in the first groove, and in the direction perpendicular to the substrate, the height of the grid
electrode is larger than that of the first groove; and forming a conductive structure on the side wall of the grid
electrode. As the conductive structure can be conductive,
electric field lines in the region, close to the conductive structure, of the grid can be guided and dispersed by the conductive structure, electric fields are prevented from being concentrated on the lower side of the grid, and the
breakdown voltage of the device is increased. Meanwhile, the conductive structure widens the conduction path of the current, increases the current intensity, and further reduces the specific on-resistance. At the moment, the thickness of the
dielectric layer on the lower side of the conductive structure is larger than that of the
dielectric layer on the lower side of the gate, and the
voltage-resistant performance of the device can be further improved.