Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor substrate structure and process method thereof

A processing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of easy cutting, the inability to achieve the base material at the same time, strong structural strength, etc., and improve the cutting accuracy. , low cost, structural strengthening effect

Inactive Publication Date: 2007-11-07
HARVATEK CORPORATION
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a semiconductor base material structure and its processing method to solve the problem that the existing base material cannot achieve easy cutting and strong structural strength at the same time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor substrate structure and process method thereof
  • Semiconductor substrate structure and process method thereof
  • Semiconductor substrate structure and process method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Please refer to Fig. 2A to Fig. 2D and Fig. 3A to Fig. 3C are two embodiments of the present invention, here the manufacturing method of the structure of the present invention is described; The manufacturing method of the structure of the present invention comprises: (1) substrate 1 processing The penetrating hole groove 14 can generally be completed by etching (it can be exposed and developed); (2) the surface of the substrate is chemically treated (acid activation) or sandblasting to make the surface rough and the composite material can be combined (3 ) filling the penetration hole groove 14 with polymer composite material 12 (which can be polyethylene-PE) can generally be screen printing or steel plate printing to achieve the purpose of filling a specific area; (4) grinding or spraying the surface of the substrate Sand, which is used to grind away the overflowing polymer material 12 on the surface of the substrate; and (5) treating the surface of the substrate with th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a semiconductor substrate structure and its processing method. The method includes: processing a trench with a through hole on the backing, filling a polymer composite material in the trench, grinding or blasting sand to the backing surface and coating material on it. The structure includes a backing with a through hole and a trench, among which, said through hole and the trench are filled with polymer and composite materials, which has the advantage of high flatness.

Description

technical field [0001] The invention relates to the field of electronic packaging, in particular to a structure of a semiconductor base material for electronic packaging and a processing method thereof. Background technique [0002] In the electronics industry, in addition to the semiconductor industry that has attracted the most attention, the Electronic Packaging Industry has also become more and more important with the requirements of light, thin, short, small and high-function electronic products, and it is evenly divided with the semiconductor industry situation. The packaging technology of the electronic packaging industry is more innovative, such as Ball Grid Array Package (Ball Gate Array Package), Plastic Pingrid Array Package (Plastic Pingrid Array Package), TQFP (Quad Flat Package), TSOP (Thin Small Outline Package, Thin Small Size Package) )Wait. [0003] As commonly known by the general public, electronic packaging technology refers to all processes that are a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/12H05K3/00H05K1/00
Inventor 汪秉龙庄峰辉黄惠燕
Owner HARVATEK CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More