Unlock instant, AI-driven research and patent intelligence for your innovation.

Deposition method for dielectric layer

A dielectric layer and atomic layer deposition technology, applied in the direction of circuits, capacitors, electrical components, etc., can solve problems such as information loss

Inactive Publication Date: 2007-12-19
SAMSUNG ELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Also, capacitors formed in memory devices such as DRAM store a small amount of charge, so that even a weak leakage current can cause information loss due to this

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition method for dielectric layer
  • Deposition method for dielectric layer
  • Deposition method for dielectric layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The method of depositing a dielectric layer according to the present invention will now be described more fully with reference to the accompanying drawings, which show preferred embodiments of the invention.

[0029] 3A to 3D are cross-sectional process diagrams illustrating the method of depositing a dielectric layer of the present invention. An oxide spacer layer 10 is deposited on a substrate 11 as shown in FIG. 3A. Thereafter, as shown in FIG. 3B , the first dielectric layer 13 is deposited on the oxide isolation layer 10 and the oxide isolation layer 10 is deposited on the first dielectric layer. As shown in FIG. 3C, a second dielectric layer 15 is deposited on the oxide isolation layer 10 and the oxide isolation layer 10 is deposited in the same manner. As shown in FIG. 3D, a third dielectric layer 17 is deposited on the oxide isolation layer 10 to complete the multi-layer structure with triple dielectric layers.

[0030] The method of the present invention for ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lattice constantaaaaaaaaaa
lattice constantaaaaaaaaaa
Login to View More

Abstract

Provided is a method for depositing a dielectric layer on a substrate. Oxidation barrier layers for preventing the oxidation and diffusion of a lower electrode are inserted into the interfaces between the substrate and a dielectric layer and between the dielectric layers. Accordingly, a capacitor having a low leakage current and a high capacitance is obtained. In addition, a dielectric constant is controlled by adjusting a lattice constant so that a multi-layer structure of high dielectric constant is formed on a large substrate.

Description

technical field [0001] The present invention relates to a method for depositing a dielectric layer, in particular to a method for depositing a dielectric layer using a barrier layer, which can prevent oxidation and diffusion of a lower electrode. Background technique [0002] Dielectric layers with high dielectric constants are often used as buffer layers to form large GaAs substrates, capacitors, and gate insulating layers in memory devices. In particular, dielectric layers are primarily used in capacitors within memory, such as dynamic random access memory (DRAM). Here, since memories have become highly integrated, capacitors with high capacity are required in order to form semiconductor devices within a limited area. [0003] A capacitor is formed of conductors facing each other and a dielectric layer sandwiched therebetween to obtain a predetermined level of capacitance. The capacitance of a capacitor is directly proportional to the effective area and dielectric consta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/3205H01L21/70H01L21/205H01L21/02H01L21/28H01L21/316H01L29/51H10B12/00
CPCH01L27/10852H01L21/31691H01L27/10814H01L29/513H01L28/56H01L21/28194H01L21/31604H01L21/31616H01L21/31683H01L29/517H01L21/02183H01L21/02271H01L21/0228H01L21/02186H01L21/02304H01L21/02197H01L21/02189H01L21/02181H01L21/022H10B12/315H10B12/033H01L21/02178H01L21/02175
Inventor 李正贤闵约赛曹永真
Owner SAMSUNG ELECTRONICS CO LTD