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Surface inativating method for improving semiconductor LED extracting efficiency

A technology of light-emitting diodes and light extraction efficiency, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of not being able to improve the light characteristics of LEDs, so as to improve light extraction efficiency, improve compactness, and reduce refractive index difference Effect

Inactive Publication Date: 2008-01-16
BEIJING TIMESLED TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SiO 2 and SiN x As a passivation layer, it cannot improve the LED light characteristics very well

Method used

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  • Surface inativating method for improving semiconductor LED extracting efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) GaAs-based red LED samples with N electrode 5 and P electrode 2 prepared

[0025] Put into the chamber of PECVD;

[0026] 2)N 2 Preheating: N 2 The flow rate is 400sccm, and the time is 5 minutes;

[0027] 3) Plasma treatment: the high-frequency power of the plasma is 10W, N 2 The flow rate is 400sccm, and the ignition time is 5 minutes;

[0028] 4) Prepare SiO on the light emitting surface of LED x N y Anti-reflection coating: The deposition temperature is 300°C, the flow rates of silane, nitrous oxide, and ammonia are respectively 400sccm, 30sccm, and 20sccm, under the conditions of alternating 13.56MHz high-frequency source for 12 seconds and 50kHz low-frequency source for 8 seconds For growth, the optical thickness deposited by PECVD is three-quarters of the red wavelength, that is, 4650 Ȧ, and the refractive index is 1.84;

[0029] 5) Use photolithography to remove SiO on the electrode on the light-emitting surface x N y AR coating.

[0030] The sample...

Embodiment 2

[0032] 1) Put the GaN-based blue LED sample with the N electrode 5 and the P electrode 2 into the PECVD chamber;

[0033] 2)N 2 Preheating: N 2 The flow rate is 600sccm, and the time is 10 minutes;

[0034] 3) Plasma treatment: the high-frequency power of the plasma is 20W, N 2 It is 600sccm, and the ignition time is Q10 minutes;

[0035] 4) Prepare SiO on the light emitting surface of LED x Ny Anti-reflection coating: The deposition temperature is 200°C, the flow rates of silane, nitrous oxide, and nitrogen are 250sccm, 180sccm, and 600sccm respectively, and are carried out under the conditions of alternating 12 seconds of 13.56MHz high frequency source and 8 seconds of 200kHZ low frequency source Growth, the optical thickness deposited by PECVD is three-quarters of the blue wavelength, that is, 3450 Ȧ, and the refractive index is 1.56;

[0036] 5) Use photolithography to remove SiO on the electrode on the light-emitting surface x N y AR coating.

[0037] Use Taiwan W...

Embodiment 3

[0039] 1) The GaN-based green LED samples having prepared N electrode 5 and P electrode 2 are put into a PECVD chamber;

[0040] 2)N 2 Preheating: N 2 The flow rate is 1000sccm, and the time is 20 minutes;

[0041] 3) Plasma treatment: the high-frequency power of the plasma is 30W, N 2 It is 1000sccm, and the ignition time is 15 minutes;

[0042] 4) Prepare SiO on the light emitting surface of LED x N y Anti-reflection coating: the deposition temperature is 100°C, the flow rates of silane, nitrous oxide, and nitrogen are 250sccm, 120sccm, and 400sccm respectively, under the condition of alternating 12 seconds of 13.56MHz high frequency source and 8 seconds of 460kHZ low frequency source Growth, the optical thickness deposited by PECVD is three-quarters of the wavelength of green light, that is, 3900 Ȧ, and the refractive index is 1.56;

[0043] 5) Use photolithography to remove SiO on the electrode on the light-emitting surface x N y AR coating.

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Abstract

Present invention relates to semiconductor LED surface passivation method, suitable for variety wavelength LED. The passivation layer in Current LED is SiO2 and SiNx, which can not improve LED light characteristic. It contains putting prepared N and P electrode LED sample in PECVD cavity, preheating N2 by of 400 -1000sccm flow rate for 5-20 minute, plasma process with radio-frequency power radio-frequency power of 10-30 w, blasting for 5-15 minute, preparing SIO xNy anti-reflecting film on LED surface, filled with silicane, nitrogen gas and nitrous oxide mixture or silicane , alkaline air and nitrous oxide mixture, using high / low frequency source alternant method to grow passivation layer by PECVD with optical thickness being quarterly odd number times of emission wavelength, refractive index being p-type semiconductor refractive index evolution, removing SIOxNy on surface electrode by photo etching erosion. Said invented passivating film has fine adhesion, high tightness, fine uniformity, and can greatly raise LED light extraction efficiency.

Description

1. Technical field [0001] The invention relates to a semiconductor light-emitting diode (LED) surface passivation method, which is suitable for semiconductor LEDs with multiple wavelengths (red light, blue light, green light, etc.). 2. Background technology [0002] Due to its small size, long life, high efficiency, high shock resistance, low power consumption, and low heat generation, light-emitting diodes are widely used in various items in daily life, such as indicator lights or light sources for various home appliances. In recent years, due to the development trend of multi-color and high-brightness, the scope of application has expanded to outdoor displays such as lighting, large outdoor display screens, traffic lights, etc. [0003] The semiconductor surface is a surface with special properties, which is extremely sensitive to the external atmosphere and seriously affects the characteristics of semiconductor devices, and semiconductor LEDs are no exception. In order t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 沈光地达小丽郭霞高国
Owner BEIJING TIMESLED TECH CO LTD