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Cross-linked elastomer composition and formed product composed of such cross-linked elastomer composition

A cross-linkable, elastomeric technology that can be used in other chemical processes, chemical instruments and methods to solve problems such as no appearance, no tolerance, and accelerated aging of fluoroelastomers

Inactive Publication Date: 2008-02-06
DAIKIN IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Alumina vs. O 2 Plasma and fluorine plasma are resistant at the same time, but under the action of NF3 remote plasma, alumina has the disadvantage of promoting the aging of fluoroelastomers
In contrast, imide-based fillers, although for NF 3 Remote plasmas show excellent tolerance, but have a strong resistance to O 2 Plasma has no resistance disadvantage
[0006] Therefore, so far, for NF 3 Plasma treatment, O 2 Elastomeric compositions resistant to plasma treatment and fluorine plasma treatment are not yet available

Method used

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  • Cross-linked elastomer composition and formed product composed of such cross-linked elastomer composition
  • Cross-linked elastomer composition and formed product composed of such cross-linked elastomer composition
  • Cross-linked elastomer composition and formed product composed of such cross-linked elastomer composition

Examples

Experimental program
Comparison scheme
Effect test

reference example 1

[0211] Reference Example 1 (Manufacturing method of fluorinated carbon)

[0212] Evenly insert 200 g of acetylene black (manufactured by Denki Kagaku Kogyo Co., Ltd., with a number average particle diameter of 0.04 μm) into a box-type reactor made of copper-nickel alloy, and heat to 400° C. while passing nitrogen gas, keeping the flow rate of fluorine at 400 ml / min and The nitrogen flow rate was 3600ml / min, and immediately after 10 hours of reaction, nitrogen gas was filled into the reactor to replace fluorine gas. While filling with nitrogen gas, the reactant was taken out after cooling to room temperature. Finally, polycarbon monofluoride with F / C of 1.0 was obtained.

Embodiment 1

[0214] Tetrafluoroethylene / perfluoro(methyl vinyl ether) (67 mol % / 33 mol %) copolymer with iodine introduced at the end, Quanhexa 2.5B (manufactured by NOF Corporation), Trimeric isocyanate Propyl ester (TAIC) (manufactured by Nippon Chemicals Co., Ltd.) and the polycarbon monofluoride obtained in Reference Example 1 were mixed according to a weight ratio of 100 / 1 / 2 / 15, and kneaded in an open roll (opening roll) to obtain Crosslinked fluoroelastomer composition.

[0215] The resulting fluoroelastomer composition was crosslinked at 160°C for 10 minutes, and then furnace crosslinked in an air oven at 180°C for 4 hours to obtain a AS568-214 molded article.

[0216] The obtained molded article was subjected to plasma irradiation treatment under the following conditions, the weight before and after irradiation was measured, and the change was calculated. The results are shown in Table 4.

[0217] ① High-concentration fluorine radical scavenging resistance test

[0218] Plasma i...

Embodiment 2

[0246] The polycarbon monofluoride in Example 1 was previously heat-treated at 350° C. for 2 hours, except that it was the same as Example 1.

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Abstract

There is provided a crosslinkable elastomer composition, which has small decrease in weight to all of high concentration F radical irradiation, O2 plasma treatment and fluorine plasma treatment which are conducted in a semiconductor manufacturing process and significant plasma resistance, and a molded article comprising the crosslinkable elastomer composition.

Description

technical field [0001] The present invention relates to a cross-linkable elastomer composition and a molded article formed from the cross-linkable elastomer composition, for NF in semiconductor manufacturing process 3 Plasma treatment, O 2 All plasma treatments such as plasma treatment and fluorine plasma treatment have a small weight change of the composition and have remarkable plasma resistance. More specifically, the present invention relates to sealing materials. Background technique [0002] Plasma devices are used in the etching, ashing, and chemical vapor deposition (CVD) processes performed in the semiconductor manufacturing process. In the plasma device, the various connecting parts and movable parts should be sealed with elastomeric sealing materials. These sealing materials not only need to have sealing performance, but also need to withstand the so-called high density (10 12 ~10 13 / cm 3 ) The harsh processing conditions of the plasma processing conditions...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L101/00C08K3/16C08K3/34C08K9/00C09K3/10C08L27/12C08L77/10C08L79/08
CPCC08L27/12C08J7/123C08L77/10C09K3/10C08J2327/12C08K3/16C08L79/08C08L2666/20C08K3/10
Inventor 东野克彦野口刚
Owner DAIKIN IND LTD
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