Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
A technology for light-emitting diodes and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, semiconductor devices, semiconductor lasers, etc., can solve the problems of difficulty in uniformly controlling the thickness of semiconductor stack parts and impossible to fully utilize
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example 1
[0070] First, a P-type Ge substrate 11 having a specific resistivity of 0.01 Ω·cm was prepared. Then, the Ge substrate 11 was anodized in an anodizing solution, thereby forming a porous Ge layer as the separation layer 12 . The anodizing conditions are as follows:
[0071] Current density: 6(mA / cm 2 )
[0072] Anodizing solution: HF:H 2 O:C 2 h 5 OH=1:1:1
[0073] Cycle: 11(minutes)
[0074] Thickness of porous Ge: 12 μm.
[0075] The current density and the concentration of the anodizing liquid can be appropriately changed according to the thickness and structure of the separation layer (porous Ge layer) 12 to be formed. The current density is preferably 0.5-700mA / cm 2 Within the range, the concentration of the anodizing solution is preferably in the range of 1:10:10 to 1:0:0.
[0076] The porous Ge layer is effective as a relaxation layer for forming a high-quality epitaxial GaAs layer thereon and as a separation layer.
[0077] The anodizing solution may be a sol...
example 2
[0098] This example is a development of Example 1 and provides a method of manufacturing a semiconductor device. First, use the same as in Example 1 figure 1 and 2 A porous Ge layer 22 is formed on a Ge substrate 21 in the same manner as shown.
[0099] Then, if Figure 8 As shown, the n-GaAs layer 23 is epitaxially grown on the porous Ge layer 22, and then the n-AlGaAs layer 24 as the n-cladding layer, the GaAs layer 25 as the active layer, and the GaAs layer as the p-clad AlGaAs layer 26 to form laser structure 50 .
[0100] Then, using the same as Example 1's Figure 4 In the same manner as shown, the surface of the p-AlGaAs layer 26 of the laser structure 50 is laminated and bonded to the surface of an additionally prepared substrate 20 . Although not shown, electrodes are formed on the substrate 20 and are electrically connected to the p-AlGaAs layer 26 . The porous Ge layer having a large surface area has an impurity removal function to remove impurities that migr...
example 3
[0105] In Example 3, two porous germanium layers 102, 103 are first formed on a germanium substrate 101 by anodizing, as Figure 10 shown. Since the porous layer formed by anodizing is formed from the surface, the porous germanium layer 103 with a lower porosity is formed first, and then the porous germanium layer with a larger porosity is formed. This process can facilitate the next step of closing the pinholes existing on the surface before epitaxial growth, and can smoothly separate the germanium substrate 101 in the later step.
[0106] Subsequently, high-temperature hydrogen annealing and the use of GeH 4 、GeCl 4 The CVD process as the raw material gas closes the pores existing on the surface of the porous germanium layer, thereby forming a satisfactory crystalline surface on the surface of the porous germanium, and sequentially epitaxially grows the single crystal germanium layer 104, the n-GaAs layer 105, n-Al x Ga 1-x As layer 106, n-Al y Ga 1-y As layer 107, n-...
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