Half-tone type phase shift mask blank, half-tone type phase shift mask and process for producing same
A phase shift mask and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, photoengraving process of pattern surface, optics, etc. Insufficient selection of etching and etching
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Embodiment 1～8
[0142] Embodiment 1~8 is corresponding to F 2 A specific example of a half-tone phase shift mask for excimer laser exposure, the substrate uses a synthetic quartz substrate, and the substrate and SiO x N y An etch stop layer is provided between the layers.
[0143] (film formation)
[0144] First, on a synthetic quartz substrate, etch stop layer A layer, and SiO x N y constitute the B layer. In this embodiment, it is manufactured according to the sputtering method. The basic compositions of layers A and B of the double-layer film in each embodiment, the conditions such as target and sputtering gas type, and the film thickness of each layer are shown in Table 1. The respective film thicknesses of the A layer and the B layer are adjusted using the above formula (1) so that the sum of the phase shift amounts of each layer becomes 180° with respect to a wavelength of 157 nm.
[0145] (optical properties)
[0146] Measure the transmittance of the double-layer film that make...
Embodiment 9
[0165] The underlying material was investigated in this example. Table 5 confirms that when using fluorine-based and chlorine-based gases for dry etching, TaZr x (Indicates the inclusion of Ta and Zr, rather than the composition ratio of Ta and Zr. The same below), and the results of the etching characteristics of Zr. Table 6 shows the results of confirming the etching properties of TaAl and TaHf when performing dry etching using fluorine-based and chlorine-based gases. That is, in this example, the dry etching characteristics of a film in which the main material is Ta and materials (Al, Hf, Zr) considered to be related to the effect of the present invention are added are mainly confirmed.
[0166] table 5
[0167]
[0168] Each film material was formed into a film using a sputtering method. When adding materials, the metal sheet of the target material is placed on the Ta target to form a film. Whether or not it was added to the film was confirmed by X-ray photoelectron...
reference example 1
[0173] In order to confirm the addition effect in Example 9, the dry etching characteristics of a Ta single metal film to which the above materials were not added were confirmed as a reference example. As shown in Table 7, the selectivity between the Ta single metal film and the quartz substrate was not sufficient for the fluorine-based gas. The etching conditions of this comparative example are implemented according to Example 9.
[0174] Table 7
[0175]
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