Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of processing and cleaning substrate, and method of and program for manufacturing electronic device

A substrate processing method and technology of the processing method, which are applied in the field of electronic equipment manufacturing, can solve the problems of difficulty in controlling the surface damage layer and the removal amount of cutting residues, easy dissolving of the surface damage layer and cutting residues by a cleaning solution, etc.

Inactive Publication Date: 2009-01-07
TOKYO ELECTRON LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, the above-mentioned cleaning step is equivalent to a wet etching step using a chemical solution. In the cleaning step, the cleaning solution easily dissolves the surface damage layer and cutting residue, etc., and there is a problem that it is difficult to control the removal amount of the surface damage layer and cutting residue.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of processing and cleaning substrate, and method of and program for manufacturing electronic device
  • Method of processing and cleaning substrate, and method of and program for manufacturing electronic device
  • Method of processing and cleaning substrate, and method of and program for manufacturing electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0105] Embodiments of the present invention will be described below with reference to the drawings.

[0106] First, a substrate processing method according to an embodiment of the present invention will be described.

[0107] FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus to which a substrate processing method according to this embodiment is applied.

[0108] In FIG. 1, a substrate processing apparatus 10 has a first processing chamber 11 for reactive ion etching (hereinafter referred to as "RIE") processing on a wafer (hereinafter referred to as "wafer") (substrate) W for electronic equipment; The first processing chamber 11 is arranged in parallel, and the second processing chamber 12 for COR (Chemical Oxide Removal) processing and PHT (Post Heat Treatment) to be described later is carried out on the wafer W; A rectangular common transfer chamber loading unit 13 connecting the processing cabin 11 and the second processing cabin 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has been revealed by chemical mechanical polishing, is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film which has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

Description

technical field [0001] The present invention relates to the processing method of substrate, the cleaning method after chemical mechanical polishing, the manufacturing method and program of electronic equipment; Particularly relate to after utilizing chemical mechanical polishing to grind the conductive film that forms on the surface, by carrying out plasma-less etching (plasma-less etching) processing, a method of manufacturing electronic devices that improves surface flatness. Background technique [0002] In an electronic device manufacturing method for manufacturing an electronic device composed of a silicon wafer (hereinafter referred to as "wafer"), the process of forming a photoresist layer with a desired pattern on an insulating film formed on the surface of the wafer is repeated sequentially. Photolithography process; using the photoresist layer as a mask, using plasma to form a conductive film on the gate electrode, or an etching process to form wiring grooves or co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105H01L21/768
Inventor 西村荣一岩﨑贤也
Owner TOKYO ELECTRON LTD