Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method of assembling quantum dot in mesoporous silica dioxide

A technology of mesoporous silica and quantum dots, applied in chemical instruments and methods, luminescent materials, etc., can solve the problem that the particle size of cadmium selenide quantum dots is not easy to control, etc., and achieve high yield, simple equipment, and convenient operation Effect

Inactive Publication Date: 2009-06-10
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size range of the quantum dots prepared by this method is relatively wide, and the particle size of the cadmium selenide quantum dots assembled in the mesoporous silica pores is not easy to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of assembling quantum dot in mesoporous silica dioxide
  • Method of assembling quantum dot in mesoporous silica dioxide
  • Method of assembling quantum dot in mesoporous silica dioxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A. Weigh 1.0 g of SBA-15 and place it in a flask, add 10 ml of aminopropyltrimethoxysilane and 100 ml of anhydrous toluene at room temperature and nitrogen atmosphere, mix and react, and let stand for 48 hours to obtain SBA -15-NH 2 precursor solution.

[0029] B. Weigh 0.2g of precursor SBA-15-NH 2 solution, add 50 ml of ethanol and 0.01 mol of cadmium acetate, stir vigorously, use the amino groups in the pores of mesoporous silica to complex Cd 2+ , generating SBA-15-Cd 2+ precursor solution.

[0030] C. Weigh 0.2g of SBA-15-Cd 2+ The precursor solution, 2g of trioctylphosphine oxide (TOPO), was placed in a three-necked flask and heated to 220°C.

[0031] D. At the same time, weigh 0.15g of Se powder in a pear-shaped bottle, operate in a glove box, add 2ml of tributylphosphine to generate TBP-Se 2- precursor solution.

[0032] E. Use a syringe to inject TBP-Se 2- Quickly inject into the solution synthesized in step C, and stir at the same time. After the injec...

Embodiment 2

[0037] A. Weigh 1.0 g of SBA-15 in a flask, add 10 ml of aminopropyltrimethoxysilane and 100 ml of anhydrous toluene at room temperature and nitrogen atmosphere, mix and react, and let stand for 48 hours to obtain the precursor SBA -15-NH 2 solution.

[0038] B. Weigh 0.2g of precursor SBA-15-NH 2 , add 50 ml of ethanol and 0.01 mol of cadmium acetate, stir vigorously, use the amino groups in the pores of mesoporous silica to complex Cd 2+ , generating SBA-15-Cd 2+ precursor solution.

[0039] C. Weigh 0.2g of SBA-15-Cd 2+ The precursor solution, 2g of trioctylphosphine oxide (TOPO), was placed in a three-necked flask and heated to 250°C.

[0040] D. At the same time, weigh 0.02g of tellurium powder in a pear-shaped bottle, operate in a glove box, add 4ml of tributylphosphine to generate TBP-Te 2- precursor solution.

[0041] E. Use a syringe to inject TBP-Te 2- Quickly pour into the solution from step C while stirring. After the injection, start timing with a stopwatch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses an assembling method of quantum point in the dielectric silica, which comprises the following steps: adopting SBA-15 as mould; making amino propyl trimethoxy silane to decorate dielectric silica; adding cadmium acetate; adsorbing Cd2+ in the channel to form SBA-15-Cd2+; reacting with TOPO, Se or Te; controlling reacting time to the grain size of cadmium selenide of quantum point of or cadmium telluride in the channel.

Description

technical field [0001] The invention relates to a method for assembling II-VI group semiconductor nanomaterials in mesoporous silicon dioxide, specifically, the semiconductor material cadmium selenide or cadmium telluride is assembled in mesoporous silicon dioxide by a high-temperature pyrolysis method In the pores of (SBA-15), cadmium selenide or cadmium telluride quantum dot materials are formed. Background technique [0002] In recent years, the preparation of nano-semiconductor materials has attracted great attention. The unique optical properties of cadmium selenide and cadmium telluride have broad application prospects in biological labels, fluorescent displays, light-emitting diodes, and solar cells. Therefore, it is of great practical significance to find a convenient preparation method of cadmium selenide and cadmium telluride quantum dots with adjustable particle size. The new generation of mesoporous silica materials have uniform and adjustable pore size in nano...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/00C09K11/56C09K11/88
Inventor 包健沈悦孙艳吴杰胡古今戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com