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Yb and Zn double-doped lead tungstate crystal and its preparation method

A lead tungstate, double-doping technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as poor optical performance, and achieve improved radiation resistance, hardness, transmission performance, and luminescence. The effect of improved performance

Inactive Publication Date: 2009-06-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is in order to solve existing lead tungstate crystal to exist V Pb , V O and crystal induced color center Pb 3- , O - And F defect, the problem of poor optical performance, and provide a kind of Yb and Zn double-doped lead tungstate crystal and preparation method thereof

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  • Yb and Zn double-doped lead tungstate crystal and its preparation method
  • Yb and Zn double-doped lead tungstate crystal and its preparation method

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specific Embodiment approach 1

[0010] Specific Embodiment 1: In this embodiment, Yb and Zn double-doped lead tungstate crystals are made of tungsten oxide, lead oxide, ytterbium oxide and zinc oxide; the molar ratio of tungsten oxide to lead oxide is 1:1, and the doped ytterbium oxide The impurity amount is 50-300 ppm of the total mass of tungsten oxide and lead oxide, and the doping amount of zinc oxide is 50-1050 ppm of the total mass of tungsten oxide and lead oxide.

specific Embodiment approach 2

[0011] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the doping amount of ytterbium oxide is 100-200 ppm of the total mass of tungsten oxide and lead oxide, and the doping amount of zinc oxide is the total mass of tungsten oxide and lead oxide. 100-1000ppm of mass. Others are the same as the first embodiment.

specific Embodiment approach 3

[0012] Specific embodiment three: the difference between this embodiment and specific embodiment one is: the doping amount of ytterbium oxide is 150ppm of the total mass of tungsten oxide and lead oxide, and the doping amount of zinc oxide is 150ppm of the total mass of tungsten oxide and lead oxide 500ppm. Others are the same as the first embodiment.

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Abstract

The invention discloses a kind of lead tungstate crystal doped with Yb and Zn, and the preparation method, relating to a kind of lead tungstate crystal and the preparation method. Said lead tungstate crystal comprises tungsten oxide, lead monoxide, ytterbium oxide and zinc oxide; the molar ratio between tungsten oxide and lead monoxide is 1: 1, the doping amount of ytterbium oxide is 50 -300 ppm of the total weight of tungsten oxide and lead monoxide, the doping amount of zinc oxide is 50 -1050 ppm of the total weight of tungsten oxide and lead monoxide. The preparation method comprises following steps: (1) calcinating, (2) growing crystal. The invention is characterized in that it dops ytterbium and zinc in lead tungstate crystal, which greatly improves its optical properties on the basis of retaining original good properties of lead tungstate crystal. It needs no vacuum suction or inert gas protection during said crystal preparation process.

Description

technical field [0001] The invention relates to a lead tungstate crystal and a preparation method thereof. Background technique [0002] Lead tungstate (PbWO 4 ) crystals are heavy scintillation crystals, which are widely used in hadron colliders (LHC) and large high-energy physics devices because of their high density, short decay time, and strong radiation resistance. [0003] During the growth process of lead tungstate crystals, due to the inconsistent volatilization degree of raw materials, there are V in the grown crystals. Pb , V O and crystal induced color center Pb 3+ , O - and F defects, thereby affecting the optical properties of lead tungstate crystals, such as the transmission spectrum of existing lead tungstate crystals in the short-wave range (330-450nm) has poor transmittance and obvious absorption; the emission intensity is relatively high Low, which is not conducive to utilization, and the blue light component of the fast component is less and the green...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B15/04
Inventor 徐衍岭王锐杨春晖王斌举杨同勇
Owner HARBIN INST OF TECH
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