Dipping type silicon-piece making method

Abstract

Dip type silicon wafer production method, in a high-purity argon environment, fix the opposite surface of a flat plate coated with a release agent on the holder, so that the release agent surface of the flat plate is dipped in liquid silicon in parallel, and the flat plate is raised And rapid cooling treatment, a layer of silicon layer is formed outside the flat plate release agent layer; the silicon layer is separated from the release agent layer to form a silicon wafer. After dipping liquid silicon and cooling to form a silicon layer, annealing treatment is carried out under the protection of argon in an annealing furnace. The material of the plate is zirconium dioxide or hafnium dioxide, and the temperature of the liquid silicon is controlled at 1425-1480°C; before dipping the liquid silicon, preheat the plate coated with the release agent to reach a temperature of 800-1000°C; The depth into the liquid silicon surface is 0.3-0.7mm, the dipping time is 0.3-0.5s, and the thickness of the formed silicon wafer is 100-400μm. After dipping the liquid silicon, move the plate to the flowing argon cooling system for processing, forming a silicon layer on the plate. The invention has the advantages of short process time consumption, no silicon material waste, few process links and high production efficiency.

Description

technical field [0001] The invention belongs to the technical field of silicon wafer processing, and in particular relates to a dipping type silicon wafer manufacturing method. Background technique [0002] At present, the mainstream silicon chip slicing technology in the world is to use the yarn cutting machine produced in Japan and Switzerland. Up to 4,000 circles, that is, 4,000 silicon wafers can be cut at a time), and then the silicon ingot is slowly approached to the steel wire, and the silicon ingot is "grinded" by the friction between the steel wire and the silicon ingot to achieve slicing. According to the technical personnel of Sharp Company, they have been able to cut silicon slices with a thickness of 120 μm. However, there are many problems in this traditional process: the kerf is almost as thick as the silicon wafer, that is to say, half of the material will be wasted. For example, 1kg of silicon material can only cut 500g of silicon wafer, and the remaining 5...

AI Technical Summary

Problems solved by technology

However, there are many problems in this traditional process: the kerf is almost as thick as the silicon wafer, that is to say, half of the material will be wasted. For example, 1kg of silicon material can only cut 500g of silicon wafer, and the remaining 500g becomes almost It is a mixture of non-recyclable silicon powder and abrasives, and once the steel wire is broken, the silicon ingot being cut will become a comb-like waste product, which has certain risks and low resource utilization

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