Method for making groove power semiconductor device

A device manufacturing method, power semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increasing process complexity, device performance degradation, source junction depth, etc., to improve switching characteristics, The effect of improving the breakdown strength and reducing the electric field strength
CN100508143CInactive Publication Date: 2009-07-01HARBIN ENG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HARBIN ENG UNIV
Publication Date
2009-07-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention is concerned with the manufacture method of the ditch groove power semiconductor device. It is: provides the materials of the basal; forms the first electric transmit epitaxy layer on the basal; forms the second electric transmit zone and the ditch groove inside the epitaxy layer; forms the ebb first electric transmit area and the medium layer with the ditch groove; and then, forms the electric transmit area within the medium layer; forms the first electric transmit source area on the surface of the second electric transmit area; forms the second electric transmit contact area with higher doping PH indicator on the second electric transmit zone surface; forms the passivation layer cap on the top of the ditch groove which must with the medium layer and the electric transmit area; forms the diffusion protecting layer on the surface of the source area and the contact area; finally, forms the structure surface with good electric connection. The invention can control the threshold voltage of the device and improves the breakdown strength of the oxide layer of the device bottom area, and improves its electric connection reliability with no extra cover film printing plate and complex method request.
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Description

(1) Technical field

[0001] The invention belongs to the field of semiconductor device manufacturing, in particular to a method for manufacturing a trench gate power semiconductor device. (2) Background technology

[0002] In the field of power electronics, power semiconductor devices are key components, and their performance characteristics play a major role in improving system performance. In order to achieve better performance, for example, lower on-state resistance is required for power MOS devices, the technology has rapidly developed from the technology of a few microns to deep sub-micron twenty years ago. For the traditional MOS structure, modern technological progress has reached the point where the size of the MOS cell can be reduced and the on-resistance cannot be reduced, which makes it difficult to reconcile the contradiction between high breakdown voltage and low on-resistance. The appearance of the trench structure can also effectively solve the on-resistance p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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