Semiconductor device and method for fabricating the same
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of increased resistance of the diffusion layer, increased resistance of thin lines, and reduced width, so as to prevent the increase of resistance Large, the effect of preventing the increase in the resistance of silicide thin wires
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no. 1 approach
[0043] refer to figure 1 The semiconductor device according to the first embodiment of the present invention will be described.
[0044] Such as figure 1 As shown, the semiconductor device according to the first embodiment has a storage unit 100 and a CMOS unit 200 formed on a semiconductor substrate 51 made of, for example, p-type silicon (Si), wherein the storage unit 100 includes an ONO film capable of accumulating charges. 56 storage transistors, and the CMOS unit 200 includes transistors constituting peripheral circuits of the storage unit 100 and performs logic operations. Here, the ONO film 56 is formed by sequentially forming, for example, a lower silicon oxide layer 56a with a thickness of 5nm, a silicon nitride layer 56b with a thickness of 10nm as a material for substantially accumulating charges, and an upper silicon oxide layer 56c with a thickness of 15nm.
[0045] In the storage unit 100, a first shallow trench isolation (STI) region 52 for insulating and se...
no. 2 approach
[0061] Below, refer to Figure 5 A semiconductor device according to a second embodiment of the present invention will be described. exist Figure 5 in, right with figure 1 Components with the same symbols in , are given the same symbols, and descriptions are omitted.
[0062] In the semiconductor device of the second embodiment, the diffusion layer 61 formed on the semiconductor substrate 51 of the first embodiment is formed as a silicide layer 62 silicided.
[0063] silicide layer 62, such as Figure 6 As shown in (a), it is formed in the following manner, namely: in the first embodiment Figure 4 In the step shown in (b), a metal film containing, for example, titanium (Ti), cobalt (Co) or nickel (Ni) is deposited on the diffusion layer 61 by vapor deposition, and heat treatment is performed on the deposited metal film. The silicidation process silicides each diffusion layer 61 to become a silicide layer 62 .
[0064] Even after this silicidation step, the height of t...
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