Low pressure low temperature gas-phase production method for ferromagnetism chromium oxide compound nano-grain film

A nanoparticle, chromium oxide technology, applied in chromium oxide/hydrate and other directions, can solve the problem of inability to obtain high-quality CrO2 films, and achieve the effects of good compatibility, high efficiency, and easy scale.

Inactive Publication Date: 2009-12-02
NANJING UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, for a long time, high-quality CrO cannot be obtained by conventional physical vapor deposition 2 thin film, to prepare high-quality CrO 2 Nanoparticle films have also been considered an intractable problem for many years

Method used

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  • Low pressure low temperature gas-phase production method for ferromagnetism chromium oxide compound nano-grain film
  • Low pressure low temperature gas-phase production method for ferromagnetism chromium oxide compound nano-grain film
  • Low pressure low temperature gas-phase production method for ferromagnetism chromium oxide compound nano-grain film

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Embodiment Construction

[0027] The following is a typical step and working parameters for preparing ferromagnetic chromium oxide nanoparticle thin film by adopting this method:

[0028] (1) if figure 1 As shown, the magnetron plasma sputtering is carried out in the condensation chamber (1) cooled by liquid nitrogen, and the sputtering target (3) - a high-purity metal chromium sheet with a diameter of 50 mm and a thickness of 3 mm is fixed on the magnetron sputtering target base (2), produce high-concentration Cr atom gas on the surface of the metal Cr target (3) by sputtering;

[0029](2) filling the condensation chamber (1) with a purity of 99.99% argon as a buffer gas from the gas filling pipe (9), the air pressure remains at a stable value of 200Pa;

[0030] (3) During the sputtering process, while filling the buffer gas, fill the condensation chamber (1) with 99.99% pure oxygen to oxidize Cr atoms, and the molecular ratio of oxygen to argon is controlled at 2% ;

[0031] (4) The power source o...

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Abstract

The invention discloses a low-temperature and low-pressure gas-phase preparation method of ferromagnetic chromium oxide nanoparticle film, which uses metal Cr as a precursor, through plasma gas-phase aggregation and real-time oxidation method, and utilizes the unique nucleation in the gas-phase aggregation process Growth and reaction environment, forming Cr oxide nanoparticles in the gas phase environment, and through the differential vacuum system, the formed nanoparticles are deposited on the substrate under high vacuum, forming a chromium oxide nanoparticle film at room temperature and low pressure, oxidation The main component of the material is chromium dioxide with ferromagnetism. The preparation method of the invention can be applied to the preparation process of high-density storage devices and nano-magnetic electronic devices, and has the characteristics of simple process, stability, high efficiency, easy scale and the like.

Description

Technical field: [0001] The invention relates to a ferromagnetic nanometer material, in particular to a low-temperature and low-pressure gas phase preparation method of a ferromagnetic chromium oxide nanoparticle film. Background technique: [0002] CrO 2 It is a technically very important transition metal binary oxide ferromagnetic material. Since the late 1960s, acicular CrO 2 Micron magnetic powder is widely used in magnetic recording materials. CrO has been discovered in recent years 2 With semi-metallic properties, in the spin-up fully spin-polarized state, it becomes a metal with a residual resistivity as small as 5 μΩcm, and exhibits a significant giant magnetoresistance effect; while in the spin-down energy state, it becomes a semiconductor. And, CrO 2 The Curie temperature of CrO is as high as 390K, which is much higher than that of other ferromagnetic semimetals. Therefore, CrO 2 It has important potential application value in magnetoelectronic devices. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G37/02
Inventor 陈燕萍丁奎韩民
Owner NANJING UNIV
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