MIM capacitor and manufacturing method thereof, semiconductor device and manufacturing method thereof

Abstract

A manufacturing method of an MIM capacitor comprises the following steps: providing a semiconductor substrate; forming a first metal layer on the semiconductor substrate; forming a second metal layeron the first metal layer, and leveling the second metal layer; forming a dielectric layer on the second metal layer; forming a third metal layer on the dielectric layer; and patterning the third metallayer, the dielectric layer, the second metal layer and the first metal layer to form the MIM capacitor with a first metal layer pattern and a second metal layer pattern as a lower polar plate, a third metal layer pattern as an upper polar plate and a dielectric layer pattern as a dielectric medium. The invention also provides an MIM capacitor, as well as a semiconductor device and a manufacturing method thereof. The invention can improve the flatness of the lower polar plate of the MIM capacitor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a metal-insulator-metal (Metal-Insulator-Metal, MIM) capacitor and a manufacturing method thereof, a semiconductor device including the MIM capacitor and a manufacturing method thereof. Background technique [0002] MIM capacitors have the advantages of high capacity and low resistivity, and are widely used in radio frequency circuits or high-speed analog circuits. MIM capacitors also have good matching characteristics with copper interconnect structures and are often fabricated integrally with copper interconnect structures. The Chinese patent application document with the patent publication number CN 1627477A (published on June 15, 2005) discloses a method for manufacturing a semiconductor device with a MIM capacitor. [0003] Figure 1 to Figure 4 It is a schematic cross-sectional view of each step of the manufacturing method of a semiconductor device with...

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Problems solved by technology

[0009] In the method for manufacturing a semiconductor device with a MIM capacitor, the first metal layer 135 used to form the lower plate 135b of the MIM capacitor is generally made of aluminum, and the grain size of aluminum is relatively large, ranging from 0.5um to 4um. The formed lower pole plate 135b is relatively rough, and the flatness is poor, and then the flatness of the dielectric film 140b formed on the lower pole plate 135b is deteriorated, as Figure 5 The schematic cross-sectional view shown in the figure; the capacitive performance of the formed capacitor is deteriorated, especially with the reduction of semiconductor manufacturing devices, the dielectric layer 140b is getting thinner and thinner, and the capacitive performance due to the uneven defect of the lower plate 135b The problem of declining

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