Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics

Abstract

This invention discloses a method for ion implantation of Cu, Ni or Fe as pretreatment process for chemical deposition on ceramic surface. The method comprises: cleaning ceramic surface, placing cleaned in an ion implantation apparatus, vacuumizing, cleaning the workpiece by gas sputtering, performing ion implantation by using Cu, Ni or Fe at an amount of 0.2*10e17-4.2*10e17 ions / cm2 and an energy of 6-30 keV, and placing the implanted ceramic in chemical deposition solution for chemical plating of Cu, Ni or Fe. This invention combines ion implantation and chemical deposition, and utilizes ion implantation to form a layer of metal identical to that to be deposited. Therefore, the formed deposition layer has such advantages as high uniformity, low porosity, good appearance, and high adhesiveness with the matrix. The method has such advantages as simple process, no secondary pollution, no need for implantation of noble metals, and high deposition efficiency.

Description

technical field [0001] The invention relates to a pretreatment process for electroless copper plating on ceramic surfaces, in particular to a pretreatment process for ion implantation of copper and nickel as electroless copper plating on ceramic surfaces. Background technique [0002] Ceramics have been widely used due to their excellent properties such as high strength, high wear resistance, high insulation, high chemical stability and low thermal expansion coefficient, but ceramics have low mechanical strength, brittleness, poor thermal stability, and are not easy to weld. Metallization of the ceramic surface can make it have the advantages of both ceramics and metals, and obtain ceramic-metal composite materials with special properties. Ceramic surface metallized composite materials are used in vacuum electronic devices, and new ceramic-metal composite materials have been applied to various technical fields such as semiconductors and integrated circuits, microwave devices...

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Problems solved by technology

[0019] There are deficiencies in the above-mentioned various methods, such as Mo-Mn and Al 2 o 3 The connection effect with AlN is not ideal, and bubbles are found at the glass / ceramic interface; the adhesion strength of the DBC method is low; it is difficult to make fine-pitch conductor patterns by the thick film method; If the plating layer is too thin, the resistance will increase, which will increase the power loss; the surface of the electroless copper plating layer is easily oxidized and the plating efficiency is low

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