Semiconductor part and its making method

Abstract

A semiconductor component comprises base, gate pile structure, adulteration area and high stress material layer. Thereinto the gate pile structure is at the base, and the gate pile structure at leastincludes dielectric layer which is piled sequentially and gate. The adulteration area is at side of the gate pile structure. The high stress material layer is configured to the adulteration area. Because the high stress material layer can increase the carrier mobility ratio of the adulteration area, so the running speed of the component can be quickened.

Description

technical field [0001] The present invention relates to an integrated circuit, and more particularly to a semiconductor element and its manufacturing method. Background technique [0002] In recent years, semiconductor materials have been widely used in various electronic industries due to their special conductivity and other characteristics. Semiconductor materials are used in a wide range of applications, including transistors, high-voltage components, logic components, memory components, and the like. For example, since the non-volatile memory in the memory element has the advantage of being able to store, read, and erase data many times, and the stored data will not disappear after power off, it has become a A semiconductor component widely used in personal computers and electronic equipment. [0003] In general, the manufacturing method of non-volatile memory, such as silicon nitride read-only memory, is usually to form a silicon oxide / silicon nitride / silicon oxide (o...

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Problems solved by technology

Therefore, the buried bit line formed by the ion implantation process is easy to diffuse the dopant in it due to the thermal process, resulting in the reduction of the effective channel of the device, and the short channel effect (short channel effect) occurs.

[0005] In addition, since the resistance of the buried bit line (doped region) itself is already high, after the line width of the buried bit line is reduced, its resistance will increase even more.

As a result of the increase in the resistance value, the current of the bit line decreases when the memory is in operation, which not only slows down the operation speed of the memory, but also leads to problems such as increased power consumption.

Especially when components develop towards high integration, the above problems will become more serious

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