Semiconductor nano structure and its preparing method

Abstract

This invention relates to a semiconductor nm structure including: a substrate as a carrier of semiconductor devices, a semiconductor buffer layer formed on the substrate by an epitaxial growing technology to buffer the stress of the substrate and other layers, a template layer formed on the buffer layer by an epitaxial growing technology as a supporting template, a passivation layer formed on the template layer by surface passivation to adsorb atoms on a surface migration potential, an inducement layer formed on the passivation layer to promote form of a semiconductor nm island, an nm island layer formed on the inducement layer as an active agent of photoelectronic devices, a cover layer on the island layer for protecting it or providing carriers.

Description

technical field [0001] The invention relates to a semiconductor material and device and a manufacturing method thereof, in particular to a semiconductor nanostructure and a manufacturing method thereof. Background technique [0002] Semiconductor nanostructure involves the following content: divided by materials, it is III-V semiconductor materials, including III-V binary semiconductor materials and ternary and quaternary compound semiconductor materials composed of them; divided by system size, it is nanoscale , belonging to the research field of mesoscopic system and quantum system. According to the growth method, it includes metal-organic chemical vapor deposition, molecular beam epitaxy, atomic beam epitaxy, etc. as the representative superlattice epitaxial growth technology, that is, the epitaxial growth technology that can grow atomic-scale ultra-thin films, nanostructures and abrupt interfaces; According to the types of epitaxial materials, it includes heterogeneous ...

AI Technical Summary

Problems solved by technology

When dislocations exist, electrons and holes can undergo non-radiative recombination, thereby reducing the probability of radiative recombination and reducing the luminous efficiency of nano-islands; similarly, the temperature characteristics of nano-islands will also be affected

It is also not good for making electronic devices

[0011] (2) The photolithography method also has the disadvantages of complex process and high cost. When the lithography line width needs to be reduced, the process cost will be greatly increased, and the process is more complicated, resulting in a decrease in yield

[0012] (3) The disadvantage of using surface pits to grow nano-islands is that nano-islands and their array structures irrelevant to substrate surface pits cannot be formed on various required substrate surfaces, which makes its application difficult. big limitations

[0013] (4) The disadvantages of the self-assembled nano-island method are: since its growth mechanism utilizes the S-K growth mode, the size of the nano-island will be limited and the adjustable range is small; in addition, real-time monitoring must be used, which can only be done in molecular In the beam epitaxy (MBE) growth method, the

Images